A proposed narrow-band-gap base transistor structure

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dc.contributor.author Haddad, George I. en_US
dc.contributor.author Mains, R. K. en_US
dc.contributor.author Reddy, U. K. en_US
dc.contributor.author East, Jack R. en_US
dc.date.accessioned 2006-04-07T20:58:55Z
dc.date.available 2006-04-07T20:58:55Z
dc.date.issued 1989 en_US
dc.identifier.citation Haddad, G. I., Mains, R. K., Reddy, U. K., East, J. R. (1989)."A proposed narrow-band-gap base transistor structure." Superlattices and Microstructures 5(3): 437-441. <http://hdl.handle.net/2027.42/28195> en_US
dc.identifier.uri http://www.sciencedirect.com/science/article/B6WXB-4951G29-8K/2/fedd589f17dc42c7fc7f3459f59d0d72 en_US
dc.identifier.uri http://hdl.handle.net/2027.42/28195
dc.description.abstract A transistor structure is proposed which alleviates the problem of high base resistance in the narrow quantum-well base region of the Resonant-Tunneling Transistor (RTT). This idea may also be used to improve the performance of the Induced Base Transistor (IBT) and other related structures. Bound states are created in the quantum well by using a base material with lower band gap than the contact layers. Electrons in these bound states form a low-resistance base region for application of bias to the device. Current flow is due to resonant tunneling via the second energy level in the well. Calculated I-V curves and switching transients for the RTT are presented. The issue of undesired tunneling current from base to collector is addressed, and a modified RTT structure is proposed which significantly reduces this problem. en_US
dc.format.extent 415831 bytes
dc.format.extent 3118 bytes
dc.format.mimetype application/pdf
dc.format.mimetype text/plain
dc.language.iso en_US
dc.publisher Elsevier en_US
dc.title A proposed narrow-band-gap base transistor structure en_US
dc.type Article en_US
dc.rights.robots IndexNoFollow en_US
dc.subject.hlbsecondlevel Physics en_US
dc.subject.hlbsecondlevel Mathematics en_US
dc.subject.hlbtoplevel Science en_US
dc.description.peerreviewed Peer Reviewed en_US
dc.contributor.affiliationum Center for High Frequency Microelectronics Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, Michigan 48109, USA en_US
dc.contributor.affiliationum Center for High Frequency Microelectronics Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, Michigan 48109, USA en_US
dc.contributor.affiliationum Center for High Frequency Microelectronics Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, Michigan 48109, USA en_US
dc.contributor.affiliationum Center for High Frequency Microelectronics Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, Michigan 48109, USA en_US
dc.description.bitstreamurl http://deepblue.lib.umich.edu/bitstream/2027.42/28195/1/0000647.pdf en_US
dc.identifier.doi http://dx.doi.org/10.1016/0749-6036(89)90329-7 en_US
dc.identifier.source Superlattices and Microstructures en_US
dc.owningcollname Interdisciplinary and Peer-Reviewed
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