Radiation damage studies of amorphous-silicon photodiode sensors for applications in radiotherapy X-ray imaging
dc.contributor.author | Antonuk, Larry E. | en_US |
dc.contributor.author | Boudry, J.M. | en_US |
dc.contributor.author | Yorkston, J. | en_US |
dc.contributor.author | Wild, C. F. | en_US |
dc.contributor.author | Longo, Michael J. | en_US |
dc.contributor.author | Street, R. A. | en_US |
dc.date.accessioned | 2006-04-10T13:31:38Z | |
dc.date.available | 2006-04-10T13:31:38Z | |
dc.date.issued | 1990-12-20 | en_US |
dc.identifier.citation | Antonuk, L. E., Boudry, J., Yorkston, J., Wild, C. F., Longo, M. J., Street, R. A. (1990/12/20)."Radiation damage studies of amorphous-silicon photodiode sensors for applications in radiotherapy X-ray imaging." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 299(1-3): 143-146. <http://hdl.handle.net/2027.42/28260> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6TJM-473FK6F-K5/2/d499497cec5657616a42fba84c5cd8e7 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/28260 | |
dc.description.abstract | The high radiation tolerance of hydrogenated amorphous silicon (a-Si:H) is one reason it has become a candidate for high-energy physics applications and for radiotherapy and diagnostic imaging. The performance of 1 [mu]m and 5 [mu]m a-Si:H n-i-p photodiode sensors used in conjunction with Lanex (Gd2O2S:Tb) intensifying screens has been measured as a function of high-energy photon dose. Over the course of irradiation with a 60Co source to a total dose of ~104 Gy the output signal due to the sensor-screen combinations experienced maximum variations of -1.3% and +2.7% for the 1 [mu]m and 5 [mu]m sensors, respectively. Transient effects associated with the sensors and screens are also reported. | en_US |
dc.format.extent | 281811 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | Radiation damage studies of amorphous-silicon photodiode sensors for applications in radiotherapy X-ray imaging | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbsecondlevel | Nuclear Engineering and Radiological Sciences | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationum | Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationum | Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationum | Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationum | Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationother | Xerox Palo Alto Research Center, Palo Alto, CA 94304, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/28260/1/0000005.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0168-9002(90)90764-W | en_US |
dc.identifier.source | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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