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Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth

dc.contributor.authorCohn, J. L.en_US
dc.contributor.authorBen-Jacob, Eshelen_US
dc.contributor.authorUher, Ctiraden_US
dc.date.accessioned2006-04-10T13:38:22Z
dc.date.available2006-04-10T13:38:22Z
dc.date.issued1990-08-06en_US
dc.identifier.citationCohn, J. L., Ben-Jacob, E., Uher, C. (1990/08/06)."Low-temperature electronic transport and the Coulomb blockade in oxidized films of bismuth." Physics Letters A 148(1-2): 110-114. <http://hdl.handle.net/2027.42/28428>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TVM-46VCG4Y-G3/2/2a65df26b58805b18457e75d5bb51818en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/28428
dc.description.abstractWe present low-temperature (0.2 T e2.en_US
dc.format.extent532154 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleLow-temperature electronic transport and the Coulomb blockade in oxidized films of bismuthen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbsecondlevelMathematicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumPhysics Department, University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumPhysics Department, University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumPhysics Department, University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/28428/1/0000211.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0375-9601(90)90587-Een_US
dc.identifier.sourcePhysics Letters Aen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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