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Process alternatives and scaling limits for high-density silicon tactile imagers

dc.contributor.authorSuzuki, K.en_US
dc.contributor.authorNajafi, Khalilen_US
dc.contributor.authorWise, K. D. (Kensall D.)en_US
dc.date.accessioned2006-04-10T13:47:40Z
dc.date.available2006-04-10T13:47:40Z
dc.date.issued1990-04en_US
dc.identifier.citationSuzuki, K., Najafi, K., Wise, K. D. (1990/04)."Process alternatives and scaling limits for high-density silicon tactile imagers." Sensors and Actuators A: Physical 23(1-3): 915-918. <http://hdl.handle.net/2027.42/28661>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6THG-44CJ2HG-R/2/bc8b7f29738cb0a52509436dfbf1d0aben_US
dc.identifier.urihttps://hdl.handle.net/2027.42/28661
dc.description.abstractIn this paper the process complexities and parasitic substrate coupling effects are compared for several different high-density capacitive tactile imagers. The dissolved-wafer process using diffused bulk-silicon row lines and metal-on-glass columns is found to offer the simplest process and fastest response, requiring only five non-critical masks and producing a settling time for the column charge of about 1 [mu]s. Using this process, a 1024-element array with a force range of 1 gm and a spatial resolution of 500 [mu]m produces a force resolution equivalent to seven bits. Scaled to a 4096-element array, this same process should produce a force resolution of nearly six bits for the same force range and a spatial resolution of 250 [mu]m.en_US
dc.format.extent295207 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleProcess alternatives and scaling limits for high-density silicon tactile imagersen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelMechanical Engineeringen_US
dc.subject.hlbsecondlevelIndustrial and Operations Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for Integrated Sensors and Circuits, Solid-State Electronics Laboratory, The University of Michigan, Ann Arbor, MI 48109-2122 U.S.A.en_US
dc.contributor.affiliationumCenter for Integrated Sensors and Circuits, Solid-State Electronics Laboratory, The University of Michigan, Ann Arbor, MI 48109-2122 U.S.A.en_US
dc.contributor.affiliationotherSensor Research Laboratory, Microelectronics Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229 Japanen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/28661/1/0000478.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0924-4247(90)87059-Ren_US
dc.identifier.sourceSensors and Actuators A: Physicalen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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