Strained layer epitaxy of InGaAs by MBE and migration enhanced epitaxy -- comparison of growth modes and surface quality
dc.contributor.author | Chen, Y. C. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Singh, Jasprit | en_US |
dc.date.accessioned | 2006-04-10T14:43:31Z | |
dc.date.available | 2006-04-10T14:43:31Z | |
dc.date.issued | 1991-05-02 | en_US |
dc.identifier.citation | Chen, Y. C., Bhattacharya, P. K., Singh, J. (1991/05/02)."Strained layer epitaxy of InGaAs by MBE and migration enhanced epitaxy -- comparison of growth modes and surface quality." Journal of Crystal Growth 111(1-4): 228-232. <http://hdl.handle.net/2027.42/29334> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6TJ6-46MD4B6-C1/2/e016f9a24bd5e813d968f687bade9f66 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/29334 | |
dc.description.abstract | Our measurements on a series of pseudomorphic n-type modulation doped field effect transistors have shown that the mobility of the two-dimensional carriers appears to suffer from increased interface roughness as the strain increases. Reflection high energy electron diffraction oscillation studies in InxGa1-xAs grown by molecular beam epitaxy show that as the strain in the overlayer increases, the growth modes change from layer-by-layer to three-dimensional island growth. However, in migration enhanced epitaxy, we find that the growth remains in the layer-by-layer mode even for high strain. Reflection high energy electron diffraction oscillations also show that surface roughness in strained layers grown by molecular beam epitaxy can be smoothed by just a few monolayers grown by migration enhanced epitaxy. This suggests that for pseudomorphic devices most of the strained active layer might be grown by molecular beam epitaxy but just a few monolayers before interface formation by migration enhanced epitaxy to produce an abrupt interface. Our device results validate this observation. | en_US |
dc.format.extent | 448007 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | Strained layer epitaxy of InGaAs by MBE and migration enhanced epitaxy -- comparison of growth modes and surface quality | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbsecondlevel | Mathematics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/29334/1/0000401.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0022-0248(91)90976-C | en_US |
dc.identifier.source | Journal of Crystal Growth | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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