The optimization of InxGa1-xAs and InP growth conditions by CBE

Show simple item record

dc.contributor.author Sherwin, Marc E. en_US
dc.contributor.author Munns, G. O. en_US
dc.contributor.author Elta, Michael E. en_US
dc.contributor.author Woelk, E. G. en_US
dc.contributor.author Crary, Selden B. en_US
dc.contributor.author Terry, Fred L. Jr. en_US
dc.contributor.author Haddad, George I. en_US
dc.date.accessioned 2006-04-10T14:43:34Z
dc.date.available 2006-04-10T14:43:34Z
dc.date.issued 1991-05-02 en_US
dc.identifier.citation Sherwin, M. E., Munns, G. O., Elta, M. E., Woelk, E. G., Crary, S. B., Terry, F. L., Haddad, G. I. (1991/05/02)."The optimization of InxGa1-xAs and InP growth conditions by CBE." Journal of Crystal Growth 111(1-4): 594-598. <http://hdl.handle.net/2027.42/29335> en_US
dc.identifier.uri http://www.sciencedirect.com/science/article/B6TJ6-46MD4B6-FH/2/c2f0b7e6fd8292a59a3495da0a37a5ae en_US
dc.identifier.uri http://hdl.handle.net/2027.42/29335
dc.description.abstract Minimization of the number of experiments needed to fully characterize and optimize the growth of epitaxial material is the first important step in realizing state of the art device structures. While widely used in some fields such as chemical engineering, response surface modeling (RSM) has been little used in crystal growth applications. Using RSM, input parameters such as substrate temperature hydride injector temperature and V/III ratio, were simultaneously adjusted to characterize the crystal growth process. This technique identified interactions among parameters, minimized the number of experiments necessary to understand and optimize the process, and minimized the variability of the growth process. RSM has been applied to the CBE growth of InGaAs and InP with the purpose of generating an operating point at which both good surface morphology and high mobility material can be produced. Although the best 77 K InP mobility was 70,000 cm2/V...s, in order to improve the surface quality the input parameters were changed so that the final mobility was 37,000 cm2/V...s. Although the quality of the InGaAs layers showed a dependence on the reactor history, there did not appear to be any sensitivity to variations made in the operating conditions. The best 77 K InGaAs mobility was 62,500 cm2/V...s. en_US
dc.format.extent 425595 bytes
dc.format.extent 3118 bytes
dc.format.mimetype application/pdf
dc.format.mimetype text/plain
dc.language.iso en_US
dc.publisher Elsevier en_US
dc.title The optimization of InxGa1-xAs and InP growth conditions by CBE en_US
dc.type Article en_US
dc.rights.robots IndexNoFollow en_US
dc.subject.hlbsecondlevel Physics en_US
dc.subject.hlbsecondlevel Mathematics en_US
dc.subject.hlbtoplevel Science en_US
dc.description.peerreviewed Peer Reviewed en_US
dc.contributor.affiliationum Center for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA en_US
dc.contributor.affiliationum Center for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA en_US
dc.contributor.affiliationum Center for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA en_US
dc.contributor.affiliationum Center for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA en_US
dc.contributor.affiliationum Center for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA en_US
dc.contributor.affiliationum Center for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA en_US
dc.contributor.affiliationum Center for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA en_US
dc.description.bitstreamurl http://deepblue.lib.umich.edu/bitstream/2027.42/29335/1/0000402.pdf en_US
dc.identifier.doi http://dx.doi.org/10.1016/0022-0248(91)91046-D en_US
dc.identifier.source Journal of Crystal Growth en_US
dc.owningcollname Interdisciplinary and Peer-Reviewed
 Show simple item record

This item appears in the following Collection(s)


Search Deep Blue

Advanced Search

Browse by

My Account

Information

Available Now


MLibrary logo