The growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 [mu]m
dc.contributor.author | Sherwin, M. E. (Marc E.) | en_US |
dc.contributor.author | Munns, G. O. | en_US |
dc.contributor.author | Nichols, D. T. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Terry, Fred L. Jr. | en_US |
dc.date.accessioned | 2006-04-10T15:13:38Z | |
dc.date.available | 2006-04-10T15:13:38Z | |
dc.date.issued | 1992-05-02 | en_US |
dc.identifier.citation | Sherwin, M. E., Munns, G. O., Nichols, D. T., Bhattacharya, P. K., Terry, Jr., F. L. (1992/05/02)."The growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 [mu]m." Journal of Crystal Growth 120(1-4): 162-166. <http://hdl.handle.net/2027.42/30056> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6TJ6-46D27HW-7V/2/0e1f47dbc2833d0ad9d1d2cf1a8d9459 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/30056 | |
dc.description.abstract | InGaAsP has been grown by CBE at compositions of 1.1, 1.2 and 1.4 [mu]m for the development of MQW-SCH lasers. The observed incorporation coefficients for TMI and TEG show strong temperature sensitivity while the phosphorus and arsenic incorporation behavior is constant over the substrate temperature range explored, 530 to 580[deg]C setpoint. For higher substrate temperatures the growth rate increases with the largest growth rates occurring for the 1.4 [mu]m quaternary. Low temperature photoluminescence indicates the possibility of compositional grading or clustering for the 1.1 [mu]m material and also for the 1.2 [mu]m material grown at the lowest substrate temperature. The final laser structure was grown with the InP cladding regions grown at 580[deg]C with the inner cladding and active regions grown at 555[deg]C. Using this approach we have successfully grown MQW-SCH lasers with the composition of the active InxGa1-xAs ranging from x=0.33 to x=0.73. Threshold current densities as low as 689 A/cm2 have been measured for an 800 [mu]m x 90 [mu]m broad area device with x=0.68. | en_US |
dc.format.extent | 352602 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | The growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 [mu]m | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbsecondlevel | Mathematics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for High Frequency Microelectronics, Electrical Engineering and Computer Science Department, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA | en_US |
dc.contributor.affiliationum | Center for High Frequency Microelectronics, Electrical Engineering and Computer Science Department, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA | en_US |
dc.contributor.affiliationum | Center for High Frequency Microelectronics, Electrical Engineering and Computer Science Department, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA | en_US |
dc.contributor.affiliationum | Center for High Frequency Microelectronics, Electrical Engineering and Computer Science Department, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA | en_US |
dc.contributor.affiliationum | Center for High Frequency Microelectronics, Electrical Engineering and Computer Science Department, 2435 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/30056/1/0000424.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0022-0248(92)90383-T | en_US |
dc.identifier.source | Journal of Crystal Growth | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.