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Ultrahigh-bandwidth vector network analyzer based on external electro-optic sampling
dc.contributor.authorFrankel, M. Y.en_US
dc.contributor.authorWhitaker, John F.en_US
dc.contributor.authorMourou, Gerard A.en_US
dc.contributor.authorValdmanis, J. A.en_US
dc.date.accessioned2006-04-10T15:19:10Z
dc.date.available2006-04-10T15:19:10Z
dc.date.issued1992-03en_US
dc.identifier.citationFrankel, M. Y., Whitaker, J. F., Mourou, G. A., Valdmanis, J. A. (1992/03)."Ultrahigh-bandwidth vector network analyzer based on external electro-optic sampling." Solid-State Electronics 35(3): 325-332. <http://hdl.handle.net/2027.42/30189>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TY5-46VKK67-18M/2/315ab286d646b3c660da89cfb6d1d523en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/30189
dc.description.abstractWe report the development of an ultrahigh-bandwidth vector network analyzer useful for small-signal characterization of high-speed semiconductor devices. It employs 100-fs optical pulses for making terahertz-bandwidth electro-optic measurements of electrical signals, as well as for sub-picosecond, photoconductive, electrical-stimulus-signal generation. High-bandwidth coplanar strip transmission lines are used for signal transmission. A 0.15 x 50 [mu]m gate AlGaAs/InGaAs/GaAs HFET has been characterized over a bandwidth of 100 GHz using this network analyzer. A comparison with conventional RF network analyzer measurements performed to 40 GHz demonstrated good agreement throughout this bandwidth. Such measurements of the actual device characteristics across their entire operating frequency range should improve device development and incorporation into active circuits.en_US
dc.format.extent635742 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleUltrahigh-bandwidth vector network analyzer based on external electro-optic samplingen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbsecondlevelElectrical Engineeringen_US
dc.subject.hlbtoplevelScienceen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumUltrafast Science Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2099, U.S.A.en_US
dc.contributor.affiliationumUltrafast Science Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2099, U.S.A.en_US
dc.contributor.affiliationumUltrafast Science Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2099, U.S.A.en_US
dc.contributor.affiliationumUltrafast Science Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2099, U.S.A.en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/30189/1/0000574.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0038-1101(92)90236-6en_US
dc.identifier.sourceSolid-State Electronicsen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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