Optoelectronic applications of LTMBE III-V materials
dc.contributor.author | Whitaker, John F. | en_US |
dc.date.accessioned | 2006-04-10T15:28:05Z | |
dc.date.available | 2006-04-10T15:28:05Z | |
dc.date.issued | 1993-12-20 | en_US |
dc.identifier.citation | Whitaker, John F. (1993/12/20)."Optoelectronic applications of LTMBE III-V materials." Materials Science and Engineering B 22(1): 61-67. <http://hdl.handle.net/2027.42/30388> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6TXF-4808V29-H/2/01c879ba80c37feaebd5c535169a24a8 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/30388 | |
dc.description.abstract | A review of the application of semiconductor layers grown at low substrate temperatures to ultrafast optoelectronics is presented. The films, grown by molecular beam epitaxy primarily around 200 [deg]C and subsequently annealed, are demonstrated to have high resistivity, high mobility, an ultrashort carrier lifetime, and a high dielectric breakdown. This combination of properties makes the low-temperature-grown materials perfectly suited for use in high-speed optoelectronic devices. A number of issues which influence the application of these materials, such as growth temperature, use of an annealing process, layer thickness, and optical wavelength, are considered. Examples of low-temperature-grown semiconductor optoelectronic devices, including ultra-high-bandwidth photoconductive detectors, high-sensitivity, high-bandwidth MSM photodetectors, and optical temporal analyzers are demonstrated. While the discussion concentrates on low-temperature-grown GaAs, the lattice-mismatched ternary compound InxGa1-xAs/GaAs is also considered in the context of detection of the longer wavelengths used in optical communications. | en_US |
dc.format.extent | 678944 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | Optoelectronic applications of LTMBE III-V materials | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Materials Science and Engineering | en_US |
dc.subject.hlbsecondlevel | Engineering (General) | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for Ultrafast Optical Science, University of Michigan, 2200 Bonisteel Blvd, Rm. 1006, Ann Arbor, MI 48109-2099, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/30388/1/0000006.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0921-5107(93)90224-B | en_US |
dc.identifier.source | Materials Science and Engineering B | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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