The dynamical transition to step-flow growth during molecular-beam epitaxy of GaAs(00l)
dc.contributor.author | Johnson, M. D. | en_US |
dc.contributor.author | Sudijono, J. L. | en_US |
dc.contributor.author | Hunt, A. W. | en_US |
dc.contributor.author | Orr, B. G. | en_US |
dc.date.accessioned | 2006-04-10T15:28:07Z | |
dc.date.available | 2006-04-10T15:28:07Z | |
dc.date.issued | 1993-12-20 | en_US |
dc.identifier.citation | Johnson, M. D., Sudijono, J., Hunt, A. W., Orr, B. G. (1993/12/20)."The dynamical transition to step-flow growth during molecular-beam epitaxy of GaAs(00l)." Surface Science 298(2-3): 392-398. <http://hdl.handle.net/2027.42/30389> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6TVX-46PB7YY-8K/2/bd8aa0bed00530ef6c80454b30cd5345 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/30389 | |
dc.description.abstract | Scanning tunneling microscopy studies have been performed on GaAs homoepitaxial films grown by molecular-beam epitaxy. Images show that in the earliest stages of deposition the morphology oscillates between one with two-dimensional islands and flat terraces. After the initial transient regime, the system evolves to a dynamical steady state. This state is characterized by a constant step density and as such the growth mode can be termed step flow. Comparison with RHEED shows that there is a direct correspondence between the surface step density and the RHEED specular intensity. Furthermore, thick films (up to 1450 monolayers) display a constant or slowly increasing surface roughness consistent with long adatom diffusion lengths and limited upward diffusion. | en_US |
dc.format.extent | 604643 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | The dynamical transition to step-flow growth during molecular-beam epitaxy of GaAs(00l) | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Materials Science and Engineering | en_US |
dc.subject.hlbsecondlevel | Chemistry | en_US |
dc.subject.hlbsecondlevel | Chemical Engineering | en_US |
dc.subject.hlbsecondlevel | Biological Chemistry | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.subject.hlbtoplevel | Health Sciences | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | The Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, M1 48109-1120, USA | en_US |
dc.contributor.affiliationum | The Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, M1 48109-1120, USA | en_US |
dc.contributor.affiliationum | The Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, M1 48109-1120, USA | en_US |
dc.contributor.affiliationum | The Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, M1 48109-1120, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/30389/1/0000007.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0039-6028(93)90053-M | en_US |
dc.identifier.source | Surface Science | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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