D-band (110-170 GHz) InP gunn devices
dc.contributor.author | Kamoua, R. | en_US |
dc.contributor.author | Eisele, Heribert | en_US |
dc.contributor.author | Haddad, George I. | en_US |
dc.date.accessioned | 2006-04-10T15:32:48Z | |
dc.date.available | 2006-04-10T15:32:48Z | |
dc.date.issued | 1993-11 | en_US |
dc.identifier.citation | Kamoua, R., Eisele, H., Haddad, G. I. (1993/11)."D-band (110-170 GHz) InP gunn devices." Solid-State Electronics 36(11): 1547-1555. <http://hdl.handle.net/2027.42/30504> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6TY5-46VC14C-1Y/2/a591f565f272554aca5628470e722951 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/30504 | |
dc.description.abstract | This paper reports on the development of InP Gunn sources for operation in the D-band (110-170 GHz). n+-n-n+ structures with flat doping as well as graded doping profiles have been considered. Oscillations were obtained at 108.3 GHz from a 1 [mu]m structure with a uniform n doping of 2.5 x 1016 cm-3. The CW RF output power was 33 mW. A 1 [mu]m graded structure with an n doping increasing linearly from 7.5 x 1015 to 2.0 x 1016 cm-3 has resulted in 20 mW at 120 GHz and 10 mW at 136 GHz. These results are believed to correspond to a fundamental mode operation and represent the state-of-the-art performance from InP Gunn devices at these frequencies. This improvement in performance is attributed in part to a processing technique based on the use of etch-stop layers and InGaAs cap layers. An etch-stop layer allows low-profile mesas (2-3 [mu]m) and InGaAs cap layers help reduce the contact resistance, thus minimizing series resistances in the device. In addition, a physical model based on the Monte Carlo method was developed to aid in the design of structures for high frequency operation. Experimental results obtained from a 1.7 [mu]m Gunn device operating at W-band frequencies were used to estimate appropriate InP material parameters. | en_US |
dc.format.extent | 768465 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | D-band (110-170 GHz) InP gunn devices | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for Space Terahertz Technology, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, U.S.A. | en_US |
dc.contributor.affiliationum | Center for Space Terahertz Technology, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, U.S.A. | en_US |
dc.contributor.affiliationother | Department of Electrical Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794-2350, U.S.A. | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/30504/1/0000133.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0038-1101(93)90026-M | en_US |
dc.identifier.source | Solid-State Electronics | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.