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Material related issues and their characterization with a view to III-V heterojunction device optimization
dc.contributor.authorPavlidis, Dimitrisen_US
dc.date.accessioned2006-04-10T15:42:25Z
dc.date.available2006-04-10T15:42:25Z
dc.date.issued1993-06-30en_US
dc.identifier.citationPavlidis, Dimitris (1993/06/30)."Material related issues and their characterization with a view to III-V heterojunction device optimization." Materials Science and Engineering B 20(1-2): 1-8. <http://hdl.handle.net/2027.42/30729>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TXF-4810RR8-4/2/ced2802e20de10dab2bbcd715c28a805en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/30729
dc.description.abstractThe impact of various material choices, i.e. InAlAs/InGaAs, AlGaAs/GaAs, GaInP/GaAs on device characteristics is analyzed. Traps located at various regions of the device impact its performance and can be identified by device characterization such as gm, Rds dispersion and low-frequency noise. Reliability characteristics can be related to material modifications under stress, i.e. traps and dopant diffusion and degradation can be minimized by growth optimization. Process induced damage due to dry-etching can be minimized by proper selection of etching conditions. A strong interaction between material and device research is necessary for best results in optimizing III-V technology.en_US
dc.format.extent836478 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleMaterial related issues and their characterization with a view to III-V heterojunction device optimizationen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbsecondlevelEngineering (General)en_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/30729/1/0000378.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0921-5107(93)90386-2en_US
dc.identifier.sourceMaterials Science and Engineering Ben_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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