The surface evolution and kinetic roughening during homoepitaxy of GaAs (001)
dc.contributor.author | Orr, B. G. | en_US |
dc.contributor.author | Johnson, M. D. | en_US |
dc.contributor.author | Orme, C. | en_US |
dc.contributor.author | Sudijono, J. L. | en_US |
dc.contributor.author | Hunt, A. W. | en_US |
dc.date.accessioned | 2006-04-10T18:16:16Z | |
dc.date.available | 2006-04-10T18:16:16Z | |
dc.date.issued | 1994 | en_US |
dc.identifier.citation | Orr, B. G., Johnson, M. D., Orme, C., Sudijono, J., Hunt, A. W. (1994)."The surface evolution and kinetic roughening during homoepitaxy of GaAs (001)." Solid-State Electronics 37(4-6): 1057-1063. <http://hdl.handle.net/2027.42/31695> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6TY5-46VMD5N-YM/2/d9bde4c4327841f3f59218db82ba328d | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/31695 | |
dc.description.abstract | Scanning tunneling microscopy studies have been performed on GaAs homoepitaxial films grown by molecular-beam epitaxy. Images show that in the earliest stages of deposition the morphology oscillates between one with two-dimensional islands and flat terraces. After the initial transient regime, the system evolves to a dynamical steady state. This state is characterized by a constant step density and as such the grown mode can be termed step flow. Comparison with reflection high-energy electron-diffraction (RHEED) shows that there is a direct correspondence between the surface step density and the RHEED specular intensity. Thick films (up to 1450 monolayers) display a slowly-increasing surface roughness. Analysis of the scaling properties and comparison with theories of film growth will be made. | en_US |
dc.format.extent | 858500 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | The surface evolution and kinetic roughening during homoepitaxy of GaAs (001) | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | The Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, MI 48109-1120, U.S.A. | en_US |
dc.contributor.affiliationum | The Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, MI 48109-1120, U.S.A. | en_US |
dc.contributor.affiliationum | The Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, MI 48109-1120, U.S.A. | en_US |
dc.contributor.affiliationum | The Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, MI 48109-1120, U.S.A. | en_US |
dc.contributor.affiliationum | The Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, MI 48109-1120, U.S.A. | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/31695/1/0000631.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0038-1101(94)90356-5 | en_US |
dc.identifier.source | Solid-State Electronics | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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