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Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy

dc.contributor.authorMunns, G. O.en_US
dc.contributor.authorChen, W. L.en_US
dc.contributor.authorSherwin, M. E. (Marc E.)en_US
dc.contributor.authorKnightly, D.en_US
dc.contributor.authorHaddad, George I.en_US
dc.contributor.authorDavis, L.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2006-04-10T18:18:51Z
dc.date.available2006-04-10T18:18:51Z
dc.date.issued1994-03-01en_US
dc.identifier.citationMunns, G. O., Chen, W. L., Sherwin, M. E., Knightly, D., Haddad, G. I., Davis, L., Bhattacharya, P. K. (1994/03/01)."Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy." Journal of Crystal Growth 136(1-4): 166-172. <http://hdl.handle.net/2027.42/31741>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TJ6-46GCX7X-SX/2/878003980d70f56a6b49aae850579c58en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/31741
dc.description.abstractIt has generally been recognized that sources of the highest purity facilitate growth of InP and InAlAs with excellent optical and electrical characteristics. The mobility, photoluminescence linewidths, X-ray linewidths, impurity levels, and ultimately device results have been evaluated for two different hydride purity levels. It was found that each of the above characteristics was affected by improved arsine and phosphine purity. The 77 K mobility of InP increased by a factor of 2 and the InAlAs silicon doping efficiency increased by a factor of 5. Accompanying improvement in device performance, notably the peak to valley ratio of resonant tunneling structures has been observed.en_US
dc.format.extent481098 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleInfluence of hydride purity on InP and InAlAs grown by chemical beam epitaxyen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbsecondlevelMathematicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 1135 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumCenter for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 1135 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumCenter for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 1135 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumCenter for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 1135 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumCenter for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 1135 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumCenter for High Frequency Micro-Electronics, Solid State Electronics Laboratory, 1135 EECS Building, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationotherSandia National Laboratory, Albuquerque, New Mexico 87185, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/31741/1/0000680.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0022-0248(94)90403-0en_US
dc.identifier.sourceJournal of Crystal Growthen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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