Temperature dependence of ionization rates in AlxGa1-xAs
dc.contributor.author | Yeh, C. | en_US |
dc.contributor.author | Shabde, S. N. | en_US |
dc.date.accessioned | 2006-04-17T16:25:31Z | |
dc.date.available | 2006-04-17T16:25:31Z | |
dc.date.issued | 1971-07 | en_US |
dc.identifier.citation | Yeh, C., Shabde, S. N. (1971/07)."Temperature dependence of ionization rates in AlxGa1-xAs." Solid-State Electronics 14(7): 557-562. <http://hdl.handle.net/2027.42/33625> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6TY5-46VKCNX-D9/2/7dbc9d635f4f7956788597d1c2e06d5c | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/33625 | |
dc.description.abstract | The ionization rates in AlxGa1-xAs have been measured in a temperature range from 77[deg]K to 373[deg]K for samples with various Al content. The results showed that the ionization rates decrease with both the Al content and temperature at a given electric field. A deviation from exp(1/E2) field dependence is observed for the sample with the highest Al content at lower temperatures. By fitting the data into the modified Baraff's plot, [lambda], the optical phonon mean free path was determined at four different temperatures. Assuming [lambda] = [lambda]0 tanh ([epsilon]r/2kT), [lambda]0, the high-energy low-temperature asymptotic limit of the mean free path was evaluated. The temperature dependence of [lambda] and the compositional dependence of [lambda]0 are discussed. | en_US |
dc.format.extent | 386134 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | Temperature dependence of ionization rates in AlxGa1-xAs | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Electron Physics Laboratory, Department of Electrical Engineering, University of Michigan, Ann Arbor, Michigan, 48104, USA | en_US |
dc.contributor.affiliationum | Electron Physics Laboratory, Department of Electrical Engineering, University of Michigan, Ann Arbor, Michigan, 48104, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/33625/1/0000133.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0038-1101(71)90131-6 | en_US |
dc.identifier.source | Solid-State Electronics | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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