High-temperature kinetic study for the reactive ion etching of InP in BCl 3 /Ar/O 2
dc.contributor.author | Demos, Alex T. | en_US |
dc.contributor.author | Fogler, H. Scott | en_US |
dc.contributor.author | Fournier, Jeffrey P. | en_US |
dc.contributor.author | Elta, Michael E. | en_US |
dc.date.accessioned | 2006-04-28T15:47:31Z | |
dc.date.available | 2006-04-28T15:47:31Z | |
dc.date.issued | 1995-03 | en_US |
dc.identifier.citation | Demos, Alex T.; Fogler, H. Scott; Fournier, Jeffrey; Elta, Michael E. (1995)."High-temperature kinetic study for the reactive ion etching of InP in BCl 3 /Ar/O 2 ." AIChE Journal 41(3): 658-665. <http://hdl.handle.net/2027.42/37431> | en_US |
dc.identifier.issn | 0001-1541 | en_US |
dc.identifier.issn | 1547-5905 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/37431 | |
dc.description.abstract | The reactive ion etching kinetics of InP studied uses BCl 3 /Ar and BCl 3 /Ar/O 2 as etchants. High-temperature etching using BCl 3 and Ar increases the etch rate negligibly. However, the addition of 30% oxygen in the gas feed increases etch rates by a factor of 10,000 up to 1.5 micron/min at wafer temperatures of 250°C. X-ray photoelectron spectroscopy analysis reveals that oxygen removes the boron species adsorbing on the InP surface by scavenging the boron to form volatile boron oxides. To study the gas-phase chemistry, optical emission spectroscopy is used to monitor atomic chlorine intensity at different gas mixtures. The chlorine intensity shows a Gaussian-type dependence with oxygen addition, which is similar to the etch rate dependence. Two regimes of etching found are: at temperatures below 150°C, the etching is limited by the removal of indium chlorides; above 180°C, the etching is reaction-limited. The surface morphology shows that the etch profile becomes rougher as a result of increased chemical etching. At high power densities (0.21 W/cm 2 ) and intermediate temperatures (150°C), near vertical wall shapes are obtained. A kinetic model for the high-temperature etching is developed, as well as a rate law based on the InCl formation reaction. The rate law compares favorably with experimental etch rate results. | en_US |
dc.format.extent | 1087159 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | American Institute of Chemical Engineers | en_US |
dc.publisher | Wiley Periodiocals, Inc. | en_US |
dc.subject.other | Chemistry | en_US |
dc.subject.other | Chemical Engineering | en_US |
dc.title | High-temperature kinetic study for the reactive ion etching of InP in BCl 3 /Ar/O 2 | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Chemical Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Dept. of Chemical Engineering, University of Michigan, Ann Arbor, MI 48109 | en_US |
dc.contributor.affiliationum | Dept. of Chemical Engineering, University of Michigan, Ann Arbor, MI 48109 ; Dept. of Chemical Engineering, University of Michigan, Ann Arbor, MI 48109 | en_US |
dc.contributor.affiliationum | Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 | en_US |
dc.contributor.affiliationum | Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/37431/1/690410322_ftp.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1002/aic.690410322 | en_US |
dc.identifier.source | AIChE Journal | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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