Filament-activated chemical vapour deposition of nitride thin films
dc.contributor.author | Deshpande, Sadanand V. | en_US |
dc.contributor.author | Dupuie, Jeffrey L. | en_US |
dc.contributor.author | Gulari, Erdogan | en_US |
dc.date.accessioned | 2006-04-28T17:05:20Z | |
dc.date.available | 2006-04-28T17:05:20Z | |
dc.date.issued | 1996-05 | en_US |
dc.identifier.citation | Deshpande, Sadanand V.; Dupuie, Jeffrey L.; Gulari, Erdogan (1996)."Filament-activated chemical vapour deposition of nitride thin films." Advanced Materials for Optics and Electronics 6(3): 135-146. <http://hdl.handle.net/2027.42/38579> | en_US |
dc.identifier.issn | 1057-9257 | en_US |
dc.identifier.issn | 1099-0712 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/38579 | |
dc.description.abstract | We have applied the novel method of hot filament-activated chemical vapour deposition (HFCVD) for low-temperature deposition of a variety of nitride thin films. In this paper the results from our recent work on aluminium, silicon and titanium nitride have been reviewed. In the HFCVD method a hot tungsten filament (1500–1850°C) was utilised to decompose ammonia in order to deposit nitride films at low substrate temperatures and high rates. The substrate temperatures ranged from 245 to 600°C. The film properties were characterised by a number of analytical and optical methods. The effect of various deposition conditions on film properties was studied. All the films obtained were of high chemical purity and had very low or no detectable tungsten contamination from the filament metal. | en_US |
dc.format.extent | 1014402 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | John Wiley & Sons Ltd. | en_US |
dc.subject.other | Chemistry | en_US |
dc.subject.other | Polymer and Materials Science | en_US |
dc.title | Filament-activated chemical vapour deposition of nitride thin films | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Chemical Engineering and Center for Display Technology and Manufacturing, The University of Michigan, Ann Arbor, MI 48109, U.S.A. ; Department of Chemical Engineering and Center for Display Technology and Manufacturing, The University of Michigan, Ann Arbor, MI 48109, U.S.A. | en_US |
dc.contributor.affiliationum | Department of Chemical Engineering and Center for Display Technology and Manufacturing, The University of Michigan, Ann Arbor, MI 48109, U.S.A. | en_US |
dc.contributor.affiliationum | Department of Chemical Engineering and Center for Display Technology and Manufacturing, The University of Michigan, Ann Arbor, MI 48109, U.S.A. | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/38579/1/221_ftp.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1002/(SICI)1099-0712(199605)6:3<135::AID-AMO221>3.0.CO;2-4 | en_US |
dc.identifier.source | Advanced Materials for Optics and Electronics | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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