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Simulation of gain-switched picosecond pulse generation from quantum well lasers
dc.contributor.authorFarokhrooz, F. N.en_US
dc.contributor.authorTafti, H. A.en_US
dc.contributor.authorSheeba, V. S.en_US
dc.contributor.authorKamath, Kishore K.en_US
dc.contributor.authorVaya, P. R.en_US
dc.date.accessioned2006-09-08T21:19:46Z
dc.date.available2006-09-08T21:19:46Z
dc.date.issued1996-11en_US
dc.identifier.citationTafti, H. A.; Sheeba, V. S.; Kamath, K. K.; Farokhrooz, F. N.; Vaya, P. R.; (1996). "Simulation of gain-switched picosecond pulse generation from quantum well lasers." Optical and Quantum Electronics 28(11): 1669-1676. <http://hdl.handle.net/2027.42/43336>en_US
dc.identifier.issn1572-817Xen_US
dc.identifier.issn0306-8919en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/43336
dc.description.abstractCircuit models for gain-switched quantum well laser diodes are developed and simulated using the circuit analysis program SPICE2. Effects of cavity length and number of wells on the output pulse shape are analysed. Picosecond pulses of 7 and 2 ps full-width at half-maximum (FWHM) are observed, corresponding to second and third quantized level transitions, respectively. A remarkable reduction in the output pulse width observed for the third quantized level transition, demonstrates the significance of higher sub-band transitions for ultrashort pulse generation.en_US
dc.format.extent373029 bytes
dc.format.extent3115 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherKluwer Academic Publishers; Chapman & Hall ; Springer Science+Business Mediaen_US
dc.subject.otherPhysicsen_US
dc.subject.otherComputer Communication Networksen_US
dc.subject.otherMaterials Processing, Characterization, and Designen_US
dc.subject.otherElectronic and Computer Engineeringen_US
dc.subject.otherApplied Optics, Optoelectronics, Optical Devicesen_US
dc.titleSimulation of gain-switched picosecond pulse generation from quantum well lasersen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelMechanical Engineeringen_US
dc.subject.hlbsecondlevelElectrictrical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering, Indian Institute of Technology, Madras-36, India; Department of EECS, University of Michigan, USAen_US
dc.contributor.affiliationotherDepartment of Electrical Engineering, Indian Institute of Technology, Madras-36, Indiaen_US
dc.contributor.affiliationotherSchool of Electronics and Communication Engineering, Anna University, Guindy, Madras-25, Indiaen_US
dc.contributor.affiliationotherDepartment of Electrical Engineering, Indian Institute of Technology, Madras-36, Indiaen_US
dc.contributor.affiliationotherDepartment of Electrical Engineering, Indian Institute of Technology, Madras-36, India; Optoelectronics Laboratory, N.U.S., Singaporeen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/43336/1/11082_2004_Article_BF00331056.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1007/BF00331056en_US
dc.identifier.sourceOptical and Quantum Electronicsen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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