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Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2006-09-08T21:19:58Z
dc.date.available2006-09-08T21:19:58Z
dc.date.issued2000-03en_US
dc.identifier.citationBhattacharya, Pallab; (2000). "Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices." Optical and Quantum Electronics 32(3): 211-225. <http://hdl.handle.net/2027.42/43339>en_US
dc.identifier.issn0306-8919en_US
dc.identifier.issn1572-817Xen_US
dc.identifier.urihttps://hdl.handle.net/2027.42/43339
dc.description.abstractStrained heterostructures are now widely used to realize high-performance lasers. Highly mismatched epitaxy also produces defect-free quantum dots via an island growth mode. The characteristics of high-speed strained quantum well and quantum dot lasers are described. It is seen that substantial improvements in small-signal modulation bandwidth are obtained in both 1 μm (48 GHz) and 1.55 μm (26 GHz) by tunneling electrons directly into the lasing sub-band. In quantum dots the small-signal modulation bandwidth is limited by electron-hole scattering to ∼7 GHz at room temperature and 23 GHz at 80 K. The properties of these devices are described.en_US
dc.format.extent180477 bytes
dc.format.extent3115 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherKluwer Academic Publishers; Springer Science+Business Mediaen_US
dc.subject.otherPhysicsen_US
dc.subject.otherCharacterization and Evaluation Materialsen_US
dc.subject.otherComputer Communication Networksen_US
dc.subject.otherApplied Optics, Optoelectronics, Optical Devicesen_US
dc.subject.otherElectron-hole Scatteringen_US
dc.subject.otherHot-carrier Effectsen_US
dc.subject.otherPerformanceen_US
dc.subject.otherQuantum Dot Laseren_US
dc.subject.otherQuantum Well Laseren_US
dc.subject.otherTunneling Injectionen_US
dc.subject.otherElectronic and Computer Engineeringen_US
dc.titleQuantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devicesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelMechanical Engineeringen_US
dc.subject.hlbsecondlevelElectrictrical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109-2122, USAen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/43339/1/11082_2004_Article_252563.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1023/A:1007065203823en_US
dc.identifier.sourceOptical and Quantum Electronicsen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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