Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2006-09-08T21:19:58Z | |
dc.date.available | 2006-09-08T21:19:58Z | |
dc.date.issued | 2000-03 | en_US |
dc.identifier.citation | Bhattacharya, Pallab; (2000). "Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices." Optical and Quantum Electronics 32(3): 211-225. <http://hdl.handle.net/2027.42/43339> | en_US |
dc.identifier.issn | 0306-8919 | en_US |
dc.identifier.issn | 1572-817X | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/43339 | |
dc.description.abstract | Strained heterostructures are now widely used to realize high-performance lasers. Highly mismatched epitaxy also produces defect-free quantum dots via an island growth mode. The characteristics of high-speed strained quantum well and quantum dot lasers are described. It is seen that substantial improvements in small-signal modulation bandwidth are obtained in both 1 μm (48 GHz) and 1.55 μm (26 GHz) by tunneling electrons directly into the lasing sub-band. In quantum dots the small-signal modulation bandwidth is limited by electron-hole scattering to ∼7 GHz at room temperature and 23 GHz at 80 K. The properties of these devices are described. | en_US |
dc.format.extent | 180477 bytes | |
dc.format.extent | 3115 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Kluwer Academic Publishers; Springer Science+Business Media | en_US |
dc.subject.other | Physics | en_US |
dc.subject.other | Characterization and Evaluation Materials | en_US |
dc.subject.other | Computer Communication Networks | en_US |
dc.subject.other | Applied Optics, Optoelectronics, Optical Devices | en_US |
dc.subject.other | Electron-hole Scattering | en_US |
dc.subject.other | Hot-carrier Effects | en_US |
dc.subject.other | Performance | en_US |
dc.subject.other | Quantum Dot Laser | en_US |
dc.subject.other | Quantum Well Laser | en_US |
dc.subject.other | Tunneling Injection | en_US |
dc.subject.other | Electronic and Computer Engineering | en_US |
dc.title | Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Mechanical Engineering | en_US |
dc.subject.hlbsecondlevel | Electrictrical Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109-2122, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/43339/1/11082_2004_Article_252563.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1023/A:1007065203823 | en_US |
dc.identifier.source | Optical and Quantum Electronics | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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