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A 250 GHz planar low noise Schottky receiver
dc.contributor.authorAli-Ahmad, Walid Youssefen_US
dc.contributor.authorBishop, William L.en_US
dc.contributor.authorCrowe, Thomas W.en_US
dc.contributor.authorRebeiz, Gabriel M.en_US
dc.date.accessioned2006-09-11T14:58:07Z
dc.date.available2006-09-11T14:58:07Z
dc.date.issued1993-04en_US
dc.identifier.citationAli-Ahmad, Walid Y.; Bishop, William L.; Crowe, Thomas W.; Rebeiz, Gabriel M.; (1993). "A 250 GHz planar low noise Schottky receiver." International Journal of Infrared and Millimeter Waves 14(4): 737-748. <http://hdl.handle.net/2027.42/44552>en_US
dc.identifier.issn1572-9559en_US
dc.identifier.issn0195-9271en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/44552
dc.description.abstractA planar quasi-optical Schottky receiver based on the quasi-integrated horn antenna has been developed and tested over the 230–280GHz bandwidth. The receiver consists of a planar GaAs Schottky diode placed at the feed of a dipole-probe suspended on a thin dielectric membrane in an etched-pyramidal horn cavity. The diode has a 1.2 Μm anode diameter and a low parasitic capacitance due to the use of an etched surface channel. The antenna-mixer results in a measured DSB conversion loss and noise temperature at 258GHz of 7.2dB±0.5dB and 1310K±70K, respectively, at room temperature. The design is compatible with SIS mixers, and the low cost of fabrication and simplicity makes it ideal for submillimeter-wave imaging arrays requiring a 10–20% bandwidth.en_US
dc.format.extent474978 bytes
dc.format.extent3115 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherKluwer Academic Publishers-Plenum Publishers; Plenum Publishing Corporation ; Springer Science+Business Mediaen_US
dc.subject.otherMeteorology/Climatologyen_US
dc.subject.otherPhysicsen_US
dc.subject.otherAstronomyen_US
dc.subject.otherElectronic and Computer Engineeringen_US
dc.titleA 250 GHz planar low noise Schottky receiveren_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbsecondlevelMathematicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumNASA/Center for Space Terahertz Technology Electrical Engineering and Computer Science Department, University of Michigan, 48109-2122, Ann Arbor, Michiganen_US
dc.contributor.affiliationumNASA/Center for Space Terahertz Technology Electrical Engineering and Computer Science Department, University of Michigan, 48109-2122, Ann Arbor, Michiganen_US
dc.contributor.affiliationotherSemi-Conductor Device Laboratory Electrical Engineering Department, University of Virginia, 22901, Charlottesville, Virginiaen_US
dc.contributor.affiliationotherSemi-Conductor Device Laboratory Electrical Engineering Department, University of Virginia, 22901, Charlottesville, Virginiaen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/44552/1/10762_2005_Article_BF02084284.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1007/BF02084284en_US
dc.identifier.sourceInternational Journal of Infrared and Millimeter Wavesen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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