High-temperature electrical conductivity of aluminium nitride

Abstract

The electrical conductivity of hot-pressed polycrystalline aluminium nitride doped with oxygen and beryllium was measured as a function of temperature from 800 to 1200° C and over a range of nitrogen partial pressure from 10 2 to 10 5 Pa. The effect of beryllium dopant, the independence of conductivity from nitrogen partial pressure, and the observed activation energy suggested extrinsic electronic species or aluminium vacancies as charge carriers. Polarization measurements made with one electrode blocking to ionic species indicated that the aluminium nitride with oxygen impurity was an extrinsic electronic conductor.