Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies
dc.contributor.author | Eisele, Heribert | en_US |
dc.contributor.author | Kamoua, R. | en_US |
dc.contributor.author | Haddad, George I. | en_US |
dc.contributor.author | Kidner, C. | en_US |
dc.date.accessioned | 2006-09-11T17:23:50Z | |
dc.date.available | 2006-09-11T17:23:50Z | |
dc.date.issued | 1993-11 | en_US |
dc.identifier.citation | Eisele, H.; Kamoua, R.; Haddad, G. I.; Kidner, C.; (1993). "Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies." Archiv für Elektrotechnik 77(1): 15-19. <http://hdl.handle.net/2027.42/46116> | en_US |
dc.identifier.issn | 1432-0487 | en_US |
dc.identifier.issn | 0003-9039 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/46116 | |
dc.description.abstract | The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, InP Gunn devices and GaAs TUNNETT diodes are evaluated. Two different selective etching technologies have been employed to fabricate devices on either a diamond heat sink or an integral heat sink. The reported RF power levels in fundamental mode are 20 mW at 120 GHz and 15 mW at 135 GHz for D-band GaAs IMPATT diodes, 21 mW at 120 GHz, 17 mW at 133 GHz and 8 mW at 155 GHz for D-band InP Gunn devices and up to 35 mW around 103 GHz for W-band GaAs TUNNETT diodes. Typical de to RF conversion efficiencies range from 0.9% up to over 4.0%. In second harmonic mode power levels of 0.25 mW at 223 GHz were measured from TUNNETT diodes and 0.4 mW at 220 GHz from a Gunn device. Die Leistungsfähigkeit dreier verschiedener Zweipolbauelemente, GaAs-IMPATT-Dioden, InP-Gunn-Bauelemente und GaAs-TUNNETT-Dioden, wird untersucht. Zwei unterschiedliche Herstellungsverfahren mit selektivem Ätzen wurden eingesetzt, um Bauelemente auf einer Diamant- bzw. integrierten Wärmesenke herzustellen. Hochfrequenzausgangsleistungen von 20 mW bei 120 GHz und 15 mW bei 135 GHz wurden mit GaAs-IMPATT-Dioden für das D-Band erzielt, 21 mW bei 120 GHz, 17 mW bei 133 GHz und 8 mW bei 155 GHz mit InP-Gunn-Bauelementen für das D-Band und bis zu 35 mW um 103 GHz mit GaAs-TUNNETT-Dioden für das W-Band. Typische Hochfrequenzwirkungsgrade lagen zwischen 0,9% und über 4%. Bei der ersten Oberwelle wurden mit TUNNETT-Dioden HF-Leistungen von 0,25 mW bei 223 GHz gemessen und 0,4 mW bei 220 GHz mit einem Gunn-Bauelement. | en_US |
dc.format.extent | 578949 bytes | |
dc.format.extent | 3115 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Springer-Verlag | en_US |
dc.subject.other | Electronic and Computer Engineering | en_US |
dc.subject.other | Engineering | en_US |
dc.subject.other | Electronics and Microelectronics, Instrumentation | en_US |
dc.title | Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for Space Terahertz Technology Department of Electrical Engineering & Computer Science, The University of Michigan, 48109-2122, Ann Arbor, Michigan, USA | en_US |
dc.contributor.affiliationum | Center for Space Terahertz Technology Department of Electrical Engineering & Computer Science, The University of Michigan, 48109-2122, Ann Arbor, Michigan, USA | en_US |
dc.contributor.affiliationum | Center for Space Terahertz Technology Department of Electrical Engineering & Computer Science, The University of Michigan, 48109-2122, Ann Arbor, Michigan, USA | en_US |
dc.contributor.affiliationother | Department of Electrical Engineering, State University of New York at Stony Brook, 11794-2350, Stony Brook, NY, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/46116/1/202_2005_Article_BF01574916.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1007/BF01574916 | en_US |
dc.identifier.source | Archiv für Elektrotechnik | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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