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Flip chip electrical interconnection by selective electroplating and bonding

dc.contributor.authorPan, L.-W.en_US
dc.contributor.authorYuen, P.en_US
dc.contributor.authorLin, L.en_US
dc.contributor.authorGarcia, E. J.en_US
dc.date.accessioned2006-09-11T19:27:57Z
dc.date.available2006-09-11T19:27:57Z
dc.date.issued2003-12en_US
dc.identifier.citationPan, L.-W.; Yuen, P.; Lin, L.; Garcia, E. J.; (2003). "Flip chip electrical interconnection by selective electroplating and bonding." Microsystem Technologies 10(1): 7-10. <http://hdl.handle.net/2027.42/47851>en_US
dc.identifier.issn0946-7076en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/47851
dc.description.abstractThis work presents a parallel electrical interconnection process by means of flip-chip, selective electroplating and bonding. The electrical interconnection lines are built on a glass substrate made of 500/2000 Å of Cr/Au with 3150 μm in length and 10 μm in width. Two silicon chips are processed as the device chips to be electrically interconnected. It has been demonstrated that 98 out of 102 interconnects are established in parallel with a successful rate of 96% and the average resistance of the electroplating bond is 12 Ω. This process has potential applications in replacing the conventional, serial wire bonding or tape automated bonding (TAB) process for massive interconnection requirements in IC or MEMS devices. Reliability test is also performed by putting the interconnects into boiling liquid nitrogen (−195 °C) repeatedly. It is found that 100% of the interconnects survive after 2 cycles of the quenching process.en_US
dc.format.extent420504 bytes
dc.format.extent3115 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherSpringer-Verlag; Springer-Verlag Berlin Heidelbergen_US
dc.subject.otherEngineeringen_US
dc.titleFlip chip electrical interconnection by selective electroplating and bondingen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelElectrical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumBerkeley Sensor and Actuator Center, Mechanical Engineering, The University of Michigan, USA,en_US
dc.contributor.affiliationotherBerkeley Sensor and Actuator Center, Mechanical Engineering, University of California at Berkeley, USA,en_US
dc.contributor.affiliationotherBerkeley Sensor and Actuator Center, Mechanical Engineering, University of California at Berkeley, USA,en_US
dc.contributor.affiliationotherBerkeley Sensor and Actuator Center, Sandia National Laboratory, USA,en_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/47851/1/542_2003_Article_189.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1007/s00542-002-0189-3en_US
dc.identifier.sourceMicrosystem Technologiesen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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