REVIEW ARTICLE: Electron-drag effects in coupled electron systems
dc.contributor.author | Rojo, Alberto G. | en_US |
dc.date.accessioned | 2006-12-19T18:56:11Z | |
dc.date.available | 2006-12-19T18:56:11Z | |
dc.date.issued | 1999-02-08 | en_US |
dc.identifier.citation | Rojo, A G (1999). "REVIEW ARTICLE: Electron-drag effects in coupled electron systems ." Journal of Physics: Condensed Matter. 11(5): R31-R52. <http://hdl.handle.net/2027.42/48880> | en_US |
dc.identifier.issn | 0953-8984 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/48880 | |
dc.description.abstract | The advances in the techniques used for fabrication and lithography of semiconductors have made it possible to study bi-layer systems made of two electronic layers separated by distances of several hundred ångströms. In this situation the electrons in layer 1 are distinguishable from those in layer 2, and can communicate through the direct inter-layer Coulomb interaction. In particular, if a current is applied to one of the layers, the electrons in the second will be dragged, giving rise to a transresistance ρD. In this article we review recent theoretical and experimental developments in the understanding of this effect. At very low temperatures it turns out that phonons dominate the transresistance. The direct Coulomb interaction and plasmon excitations are important at temperatures T >0.1TF, with TF the Fermi temperature. If a magnetic field is applied, the transresistance is increased, in a very interesting interplay between ρD and Landau quantization. The non-dissipative drag is also reviewed. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 281292 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | REVIEW ARTICLE: Electron-drag effects in coupled electron systems | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Physics, The University of Michigan, Ann Arbor, MI 48109-1120, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/48880/2/c905r1.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0953-8984/11/5/004 | en_US |
dc.identifier.source | Journal of Physics: Condensed Matter. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.