Comparison between the different implantation orders in H + and He + coimplantation
dc.contributor.author | Duo, Xinzhong | en_US |
dc.contributor.author | Liu, Weili | en_US |
dc.contributor.author | Zhang, Miao | en_US |
dc.contributor.author | Wang, Lianwei | en_US |
dc.contributor.author | Lin, Chenglu | en_US |
dc.contributor.author | Okuyama, M. | en_US |
dc.contributor.author | Noda, M. | en_US |
dc.contributor.author | Cheung, Wing-Yiu | en_US |
dc.contributor.author | Chu, Paul K. | en_US |
dc.contributor.author | Hu, Peigang | en_US |
dc.contributor.author | Wang, S. X. | en_US |
dc.contributor.author | Wang, L. M. | en_US |
dc.date.accessioned | 2006-12-19T18:58:38Z | |
dc.date.available | 2006-12-19T18:58:38Z | |
dc.date.issued | 2001-02-21 | en_US |
dc.identifier.citation | Duo, Xinzhong; Liu, Weili; Zhang, Miao; Wang, Lianwei; Lin, Chenglu; Okuyama, M; Noda, M; Cheung, Wing-Yiu; Chu, Paul K; Hu, Peigang; Wang, S X; Wang, L M (2001). "Comparison between the different implantation orders in H + and He + coimplantation." Journal of Physics D: Applied Physics. 34(4): 477-482. <http://hdl.handle.net/2027.42/48910> | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/48910 | |
dc.description.abstract | H + and He + were implanted into single crystals in different orders (H + first or He + first). Subsequently, the samples were annealed at different temperatures from 200 °C to 450 °C for 1 h. Cross sectional transmission electron microscopy, Rutherford backscattering spectrometry and channelling, elastic recoil detection were employed to characterize the defects and the distribution of H and He in the samples. Furthermore, the positron traps introduced by ion implantation and annealing were characterized by slow positron annihilation spectroscopy. Both orders in the coimplantation of H and He have the ability to decreases the total implantation dose after annealing. No bubbles or voids but cracks and platelets, were observed by cross sectional transmission electron microscopy. The different implantation orders affect the density of interstitial atoms and positron traps. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 304200 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | Comparison between the different implantation orders in H + and He + coimplantation | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Nuclear Engineering and Radiological Sciences, College of Engineering, University of Michigan, MI 48109-2104, USA | en_US |
dc.contributor.affiliationum | Department of Nuclear Engineering and Radiological Sciences, College of Engineering, University of Michigan, MI 48109-2104, USA | en_US |
dc.contributor.affiliationother | Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China | en_US |
dc.contributor.affiliationother | Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China | en_US |
dc.contributor.affiliationother | Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China | en_US |
dc.contributor.affiliationother | Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China | en_US |
dc.contributor.affiliationother | Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China | en_US |
dc.contributor.affiliationother | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyanaka, Osaka 560-8531, Japan | en_US |
dc.contributor.affiliationother | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyanaka, Osaka 560-8531, Japan | en_US |
dc.contributor.affiliationother | Department of EEE, Chinese University of Hong Kong, New Territory, Hong Kong, People's Republic of China | en_US |
dc.contributor.affiliationother | City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China | en_US |
dc.contributor.affiliationother | Applied Ion Beam Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/48910/2/d10406.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3727/34/4/306 | en_US |
dc.identifier.source | Journal of Physics D: Applied Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.