Fabrication and characterization of wire-like SnO2
dc.contributor.author | Liu, C. M. | en_US |
dc.contributor.author | Zu, X. T. | en_US |
dc.contributor.author | Wei, Q. M. | en_US |
dc.contributor.author | Wang, L. M. | en_US |
dc.date.accessioned | 2006-12-19T18:58:43Z | |
dc.date.available | 2006-12-19T18:58:43Z | |
dc.date.issued | 2006-06-21 | en_US |
dc.identifier.citation | Liu, C M; Zu, X T; Wei, Q M; Wang, L M (2006). "Fabrication and characterization of wire-like SnO2." Journal of Physics D: Applied Physics. 39(12): 2494-2497. <http://hdl.handle.net/2027.42/48911> | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/48911 | |
dc.description.abstract | Wire-like SnO2 is fabricated by the wet chemical method. X-ray diffraction measurements show that the obtained samples have rutile-type structure. Electron transmission microscopy experiments illustrate that the wire-like SnO2 ranged from 10 to 50 nm in width and several microns (µm) in length. The high-resolution TEM indicates that SnO2 wires are single crystals. The possible growth mechanism is proposed, and it is found that polyethylene glycol plays an important role in obtaining the wire-like and nano-rods morphology of SnO2. The band gap is determined to be 3.56 eV. Two photoluminescence peaks located at 389 and 470 nm are observed. Our fabrication method promises a simple way of synthesizing wire-like SnO2 at a low temperature of 350°C. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 872936 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | Fabrication and characterization of wire-like SnO2 | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109-2104, USA | en_US |
dc.contributor.affiliationum | Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109-2104, USA | en_US |
dc.contributor.affiliationother | Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China | en_US |
dc.contributor.affiliationother | Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China; International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110015, People's Republic of China; | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/48911/2/d6_12_004.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3727/39/12/004 | en_US |
dc.identifier.source | Journal of Physics D: Applied Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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