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TOPICAL REVIEW: Semiconductor nanowires

dc.contributor.authorLu, Weien_US
dc.contributor.authorLieber, Charles M.en_US
dc.date.accessioned2006-12-19T18:58:53Z
dc.date.available2006-12-19T18:58:53Z
dc.date.issued2006-11-07en_US
dc.identifier.citationLu, Wei; Lieber, Charles M (2006). "TOPICAL REVIEW: Semiconductor nanowires." Journal of Physics D: Applied Physics. 39(21): R387-R406. <http://hdl.handle.net/2027.42/48913>en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/48913
dc.description.abstractSemiconductor nanowires (NWs) represent a unique system for exploring phenomena at the nanoscale and are also expected to play a critical role in future electronic and optoelectronic devices. Here we review recent advances in growth, characterization, assembly and integration of chemically synthesized, atomic scale semiconductor NWs. We first introduce a general scheme based on a metal-cluster catalyzed vapour–liquid–solid growth mechanism for the synthesis of a broad range of NWs and nanowire heterostructures with precisely controlled chemical composition and physical dimension. Such controlled growth in turn results in controlled electrical and optical properties. Subsequently, we discuss novel properties associated with these one-dimensional (1D) structures such as discrete 1D subbands formation and Coulomb blockade effects as well as ballistic transport and many-body phenomena. Room-temperature high-performance electrical and optical devices will then be discussed at the single- or few-nanowire level. We will then explore methods to assemble and integrate NWs into large-scale functional circuits and real-world applications, examples including high-performance DC/RF circuits and flexible electronics. Prospects of a fundamentally different ‘bottom-up’ paradigm, in which functionalities are coded during growth and circuits are formed via self-assembly, will also be briefly discussed.en_US
dc.format.extent3118 bytes
dc.format.extent2867709 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherIOP Publishing Ltden_US
dc.titleTOPICAL REVIEW: Semiconductor nanowiresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA;en_US
dc.contributor.affiliationotherDepartment of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA; Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USAen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/48913/2/d6_21_R01.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0022-3727/39/21/R01en_US
dc.identifier.sourceJournal of Physics D: Applied Physics.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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