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Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection
dc.contributor.authorChakrabarti, S.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorStiff-Roberts, A. D.en_US
dc.contributor.authorLin, Y. Y.en_US
dc.contributor.authorSingh, Jaspriten_US
dc.contributor.authorLei, Y.en_US
dc.contributor.authorBrowning, N.en_US
dc.date.accessioned2006-12-19T18:59:12Z
dc.date.available2006-12-19T18:59:12Z
dc.date.issued2003-08-07en_US
dc.identifier.citationChakrabarti, S; Bhattacharya, P; Stiff-Roberts, A D; Lin, Y Y; Singh, J; Lei, Y; Browning, N (2003). "Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection." Journal of Physics D: Applied Physics. 36(15): 1794-1797. <http://hdl.handle.net/2027.42/48917>en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/48917
dc.description.abstractWe have studied the characteristics of intersubband absorption of polarized infrared (IR) radiation in as-grown and annealed self-organized InAs/GaAs quantum dots. It is observed that with the increase of annealing time and temperature, the dots tend to flatten and behave more like quantum wells. As a result, their sensitivity to TE (in-plane)-polarized light decreases and that to TM (out-of-plane)-polarized light increases. The effect could be utilized for the realization of polarization-sensitive IR detectors.en_US
dc.format.extent3118 bytes
dc.format.extent128367 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherIOP Publishing Ltden_US
dc.titleIntersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detectionen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationotherDepartment of Physics, University of Illinois, Chicago, IL 60607-7059, USAen_US
dc.contributor.affiliationotherDepartment of Physics, University of Illinois, Chicago, IL 60607-7059, USA; National Center for Electron Microscopy, MS 72-150, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USAen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/48917/2/d31508.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0022-3727/36/15/308en_US
dc.identifier.sourceJournal of Physics D: Applied Physics.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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