Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection
dc.contributor.author | Chakrabarti, S. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Stiff-Roberts, A. D. | en_US |
dc.contributor.author | Lin, Y. Y. | en_US |
dc.contributor.author | Singh, Jasprit | en_US |
dc.contributor.author | Lei, Y. | en_US |
dc.contributor.author | Browning, N. | en_US |
dc.date.accessioned | 2006-12-19T18:59:12Z | |
dc.date.available | 2006-12-19T18:59:12Z | |
dc.date.issued | 2003-08-07 | en_US |
dc.identifier.citation | Chakrabarti, S; Bhattacharya, P; Stiff-Roberts, A D; Lin, Y Y; Singh, J; Lei, Y; Browning, N (2003). "Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection." Journal of Physics D: Applied Physics. 36(15): 1794-1797. <http://hdl.handle.net/2027.42/48917> | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/48917 | |
dc.description.abstract | We have studied the characteristics of intersubband absorption of polarized infrared (IR) radiation in as-grown and annealed self-organized InAs/GaAs quantum dots. It is observed that with the increase of annealing time and temperature, the dots tend to flatten and behave more like quantum wells. As a result, their sensitivity to TE (in-plane)-polarized light decreases and that to TM (out-of-plane)-polarized light increases. The effect could be utilized for the realization of polarization-sensitive IR detectors. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 128367 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationother | Department of Physics, University of Illinois, Chicago, IL 60607-7059, USA | en_US |
dc.contributor.affiliationother | Department of Physics, University of Illinois, Chicago, IL 60607-7059, USA; National Center for Electron Microscopy, MS 72-150, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/48917/2/d31508.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3727/36/15/308 | en_US |
dc.identifier.source | Journal of Physics D: Applied Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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