Ion current distribution on a substrate during nanostructure formation
dc.contributor.author | Levchenko, Igor | en_US |
dc.contributor.author | Korobov, M. | en_US |
dc.contributor.author | Romanov, M. | en_US |
dc.contributor.author | Keidar, Michael | en_US |
dc.date.accessioned | 2006-12-19T18:59:32Z | |
dc.date.available | 2006-12-19T18:59:32Z | |
dc.date.issued | 2004-06-21 | en_US |
dc.identifier.citation | Levchenko, I; Korobov, M; Romanov, M; Keidar, M (2004). "Ion current distribution on a substrate during nanostructure formation." Journal of Physics D: Applied Physics. 37(12): 1690-1695. <http://hdl.handle.net/2027.42/48921> | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/48921 | |
dc.description.abstract | The distribution of an ion current density on a substrate with a discontinuous film consisting of islands of dimension 25–100 nm was studied numerically. It was found that the ion current distribution is highly non-uniform and islands of the discontinuous film are enclosed with sharply defined zones where the current density is very low. The total area of low current zones reaches 30–50% of the substrate area, depending on the voltage applied to the substrate. The ratio of island radius–low current zone width depends on the island size and equals approximately 1.0 for large islands and 0.5 for small islands. It is shown that the island distribution function may be controlled by bias voltage variation. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 319765 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | Ion current distribution on a substrate during nanostructure formation | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Aerospace Engineering, The University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationother | National Aerospace University, Kharkov, Ukraine | en_US |
dc.contributor.affiliationother | National Aerospace University, Kharkov, Ukraine | en_US |
dc.contributor.affiliationother | National Aerospace University, Kharkov, Ukraine | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/48921/2/d4_12_014.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3727/37/12/014 | en_US |
dc.identifier.source | Journal of Physics D: Applied Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.