Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots
dc.contributor.author | Norris, Theodore B. | en_US |
dc.contributor.author | Kim, K. | en_US |
dc.contributor.author | Urayama, J. | en_US |
dc.contributor.author | Wu, Z. K. | en_US |
dc.contributor.author | Singh, Jasprit | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2006-12-19T18:59:47Z | |
dc.date.available | 2006-12-19T18:59:47Z | |
dc.date.issued | 2005-07-07 | en_US |
dc.identifier.citation | Norris, T B; Kim, K; Urayama, J; Wu, Z K; Singh, J; Bhattacharya, P K (2005). "Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots." Journal of Physics D: Applied Physics. 38(13): 2077-2087. <http://hdl.handle.net/2027.42/48924> | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/48924 | |
dc.description.abstract | We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the dependence of quantum dot carrier dynamics on temperature. At low temperatures and densities, the rates for relaxation between the quantum dot confined states and for capture from the barrier region into the various dot levels could be directly determined. For electron–hole pairs generated directly in the quantum dot excited state, relaxation is dominated by electron–hole scattering, and occurs on a 5 ps time scale. Capture times from the barrier into the quantum dot are of the order of 2 ps (into the excited state) and 10 ps (into the ground state). The phonon bottleneck was clearly observed in low-density capture experiments, and the conditions for its observation (namely, the suppression of electron–hole scattering for nongeminately captured electrons) were determined. As temperature increases beyond about 100 K, the dynamics become dominated by the re-emission of carriers from the lower dot levels, due to the large density of states in the wetting layer and barrier region. Measurements of the gain dynamics show fast (130 fs) gain recovery due to intradot carrier–carrier scattering, and picosecond-scale capture. Direct measurement of the transparency density versus temperature shows the dramatic effect of carrier re-emission for the quantum dots on thermally activated scattering. The carrier dynamics at elevated temperature are thus strongly dominated by the high density of the high energy continuum states relative to the dot confined levels. Deleterious hot carrier effects can be suppressed in quantum dot lasers by resonant tunnelling injection. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 464933 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, University of Michigan, 2200 Bonisteel Blvd, Ann Arbor, MI 48109-2099, USA | en_US |
dc.contributor.affiliationum | Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, University of Michigan, 2200 Bonisteel Blvd, Ann Arbor, MI 48109-2099, USA | en_US |
dc.contributor.affiliationum | Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, University of Michigan, 2200 Bonisteel Blvd, Ann Arbor, MI 48109-2099, USA | en_US |
dc.contributor.affiliationum | Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, University of Michigan, 2200 Bonisteel Blvd, Ann Arbor, MI 48109-2099, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/48924/2/d5_13_003.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3727/38/13/003 | en_US |
dc.identifier.source | Journal of Physics D: Applied Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.