High-performance mid-infrared quantum dot infrared photodetectors
dc.contributor.author | Chakrabarti, S. | en_US |
dc.contributor.author | Stiff-Roberts, A. D. | en_US |
dc.contributor.author | Su, X. H. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Ariyawansa, G. | en_US |
dc.contributor.author | Perera, A. G. U. | en_US |
dc.date.accessioned | 2006-12-19T18:59:57Z | |
dc.date.available | 2006-12-19T18:59:57Z | |
dc.date.issued | 2005-07-07 | en_US |
dc.identifier.citation | Chakrabarti, S; Stiff-Roberts, A D; Su, X H; Bhattacharya, P; Ariyawansa, G; Perera, A G U (2005). "High-performance mid-infrared quantum dot infrared photodetectors." Journal of Physics D: Applied Physics. 38(13): 2135-2141. <http://hdl.handle.net/2027.42/48926> | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/48926 | |
dc.description.abstract | Quantum dot infrared photodetectors (QDIPs) have emerged as attractive devices for sensing long wavelength radiation. Their principle of operation is based on intersublevel transitions in quantum dots (QDs). Three-dimensional quantum confinement offers the advantages of normal incidence operation, low dark currents and high-temperature operation. The performance characteristics of mid-infrared devices with three kinds of novel heterostructures in the active region are described here. These are a device with upto 70 QD layers, a device with a superlattice in the active region, and a tunnel QDIP. Low dark currents (1.59 A cm−2 at 300 K), large responsivity (2.5 A W−1 at 78 K) and large specific detectivity (1011 cm Hz1/2 W−1 at 100 K) are measured in these devices. It is evident that QDIPs will find application in the design of high-temperature focal plane arrays. Imaging with small QD detector arrays using the raster scanning technique is also demonstrated. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 654592 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | High-performance mid-infrared quantum dot infrared photodetectors | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA; | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationother | Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA | en_US |
dc.contributor.affiliationother | Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/48926/2/d5_13_009.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3727/38/13/009 | en_US |
dc.identifier.source | Journal of Physics D: Applied Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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