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dc.contributor.authorSingh, Jaspriten_US
dc.date.accessioned2006-12-19T19:00:17Z
dc.date.available2006-12-19T19:00:17Z
dc.date.issued1992-03-01en_US
dc.identifier.citationSingh, J (1992). "The tailoring of impact ionization phenomenon using pseudomorphic structures-applications to InGaAlAs on GaAs and InP substrates." Semiconductor Science and Technology. 7(3B): B509-B511. <http://hdl.handle.net/2027.42/48930>en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/48930
dc.description.abstractThe potential of utilizing strain for suppressing impact ionization is evaluated. It is found that if compressive strain is introduced without altering the bandgap (e.g. by using properly tailored InGaAlAs alloys) the threshold energy for electron impact ionization is significantly increased for both GaAs-based and InP-based materials.en_US
dc.format.extent3118 bytes
dc.format.extent147164 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherIOP Publishing Ltden_US
dc.titleThe tailoring of impact ionization phenomenon using pseudomorphic structures-applications to InGaAlAs on GaAs and InP substratesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationotherDept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USAen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/48930/2/ss920bd3.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0268-1242/7/3B/133en_US
dc.identifier.sourceSemiconductor Science and Technology.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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