View Item 

Show simple item record

LETTER TO THE EDITOR: Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures

dc.contributor.authorUrsaki, V. V.en_US
dc.contributor.authorTiginyanu, I. M.en_US
dc.contributor.authorSyrbu, N. N.en_US
dc.contributor.authorZalamai, V. V.en_US
dc.contributor.authorHubbard, Seth M.en_US
dc.contributor.authorPavlidis, Dimitrisen_US
dc.date.accessioned2006-12-19T19:00:48Z
dc.date.available2006-12-19T19:00:48Z
dc.date.issued2003-02-01en_US
dc.identifier.citationUrsaki, V V; Tiginyanu, I M; Syrbu, N N; Zalamai, V V; Hubbard, S; Pavlidis, D (2003). "LETTER TO THE EDITOR: Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures." Semiconductor Science and Technology. 18(2): L9-L11. <http://hdl.handle.net/2027.42/48936>en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/48936
dc.description.abstractSharp variations in optical reflectivity were observed when cooling and heating AlN/GaN heterostructures on sapphire substrates between room temperature and 10 K. The reflectivity was found to decrease at a definite temperature Tk in the downward temperature run, and to recover at Tr > Tk in the subsequent upward temperature run. The temperature behaviour of reflectivity exhibits memory on the cooling–heating cycles previously subjected to samples.en_US
dc.format.extent3118 bytes
dc.format.extent144460 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherIOP Publishing Ltden_US
dc.titleLETTER TO THE EDITOR: Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, The University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationumSolid State Electronics Laboratory, The University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationotherLaboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Technical University of Moldova, Chisinau 2004, Moldovaen_US
dc.contributor.affiliationotherLaboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Technical University of Moldova, Chisinau 2004, Moldovaen_US
dc.contributor.affiliationotherLaboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Technical University of Moldova, Chisinau 2004, Moldovaen_US
dc.contributor.affiliationotherLaboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Technical University of Moldova, Chisinau 2004, Moldovaen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/48936/2/s302l1.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0268-1242/18/2/101en_US
dc.identifier.sourceSemiconductor Science and Technology.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


Files in this item

Name:
s302l1.pdf
Size:
141.0KB
Format:
PDF
View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.