Thermal conductivity of tin-doped bismuth between 50 mK and 7K
dc.contributor.author | Uher, Ctirad | en_US |
dc.contributor.author | Heremans, J. P. | en_US |
dc.contributor.author | Issi, J. -P. | en_US |
dc.contributor.author | de Goer, A. M. | en_US |
dc.contributor.author | Locatelli, M. | en_US |
dc.date.accessioned | 2006-12-19T19:06:01Z | |
dc.date.available | 2006-12-19T19:06:01Z | |
dc.date.issued | 1985-05-30 | en_US |
dc.identifier.citation | Uher, C; Heremans, J; Issi, J -P; Goer, A M de; Locatelli, M (1985). "Thermal conductivity of tin-doped bismuth between 50 mK and 7K." Journal of Physics C: Solid State Physics. 18(15): 3001-3010. <http://hdl.handle.net/2027.42/48999> | en_US |
dc.identifier.issn | 0022-3719 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/48999 | |
dc.description.abstract | The authors report on the thermal conductivity of tin-doped bismuth between 50 mK and 27K. A quantitative interpretation of the data is presented. At the lowest temperatures the electronic thermal conductivity dominates, but above 0.1K lattice waves carry most of the heat. Below 1K phonons are scattered mostly by crystal boundaries, while near the dielectric maximum point defects are important. Their scattering rate is directly proportional to the atomic concentration of the tin impurity. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 596440 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | Thermal conductivity of tin-doped bismuth between 50 mK and 7K | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationother | Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA | en_US |
dc.contributor.affiliationother | Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA | en_US |
dc.contributor.affiliationother | Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA | en_US |
dc.contributor.affiliationother | Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA | en_US |
dc.contributor.affiliationother | Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/48999/2/jcv18i15p3001.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3719/18/15/010 | en_US |
dc.identifier.source | Journal of Physics C: Solid State Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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