A generic micromachined silicon platform for high-performance RF passive components
dc.contributor.author | Ziaie, Babak | en_US |
dc.contributor.author | Najafi, Khalil | en_US |
dc.date.accessioned | 2006-12-19T19:08:18Z | |
dc.date.available | 2006-12-19T19:08:18Z | |
dc.date.issued | 2000-09-01 | en_US |
dc.identifier.citation | Ziaie, Babak; Najafi, Khalil (2000). "A generic micromachined silicon platform for high-performance RF passive components." Journal of Micromechanics and Microengineering. 10(3): 365-371. <http://hdl.handle.net/2027.42/49026> | en_US |
dc.identifier.issn | 0960-1317 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/49026 | |
dc.description.abstract | This paper describes the development of a micromachined silicon platform fabricated using the dissolved wafer process that supports: (1) high self-resonance frequency and quality factor inductors suspended on a dielectric membrane, (2) low-loss thin-film capacitors, and (3) polysilicon resistors. The process uses deep boron diffusion to create silicon anchors, which support a stress compensated dielectric membrane. A thick resist mold is used to gold electroplate the inductor, top capacitor plate, and bonding pads. This platform can be used to build miniature high-performance transceivers or other RF subsystems using either hybrid-attached surface-mount components or flip-chip bonded RF circuits. Using this technique, a Colpitts transmitter with a five-turn dielectric suspended inductor was designed and fabricated. The transmitter oscillates in the frequency band of 275-375 MHz, consumes 200 µA when operated continuously and 100 µA when amplitude modulated (on-off keying) at a rate of 1 Mbps (50% duty cycle). | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 301708 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | A generic micromachined silicon platform for high-performance RF passive components | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, Centre for Integrated Microsystems, University of Michigan, Ann Arbor, MI, USA | en_US |
dc.contributor.affiliationother | Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/49026/2/jm0310.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0960-1317/10/3/310 | en_US |
dc.identifier.source | Journal of Micromechanics and Microengineering. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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