A CMOS-compatible high aspect ratio silicon-on-glass in-plane micro-accelerometer
dc.contributor.author | Chae, Junseok | en_US |
dc.contributor.author | Kulah, Haluk | en_US |
dc.contributor.author | Najafi, Khalil | en_US |
dc.date.accessioned | 2006-12-19T19:09:13Z | |
dc.date.available | 2006-12-19T19:09:13Z | |
dc.date.issued | 2005-02-01 | en_US |
dc.identifier.citation | Chae, Junseok; Kulah, Haluk; Najafi, Khalil (2005). "A CMOS-compatible high aspect ratio silicon-on-glass in-plane micro-accelerometer." Journal of Micromechanics and Microengineering. 15(2): 336-345. <http://hdl.handle.net/2027.42/49037> | en_US |
dc.identifier.issn | 0960-1317 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/49037 | |
dc.description.abstract | This paper presents a post-CMOS-compatible micro-machined silicon-on-glass (SOG) in-plane capacitive accelerometer. The accelerometer is a high aspect ratio structure with a 120 µm thick single-crystal silicon proof-mass and 3.4 µm sense gap, bonded to a glass substrate. It is fabricated using a simple 3-mask, 5-step process, and is fully CMOS compatible. A CMOS switched-capacitor readout circuit and an oversampled Σ–delta modulator are used to read out capacitance changes from the accelerometer. The CMOS chip is 2.6 × 2.4 mm2 in size, utilizes chopper stabilization and correlated double sampling techniques, has a 106 dB open-loop dynamic range, a low input offset of 370 µV, and can resolve better than 20 aF. The accelerometer system has a measured sensitivity of 40 mV g−1 and input referred noise density of 79 µg Hz−1/2. Using the SOG configuration, a post-CMOS monolithic integration technique is developed. The integration technique utilizes dielectric bridges, silicon islands and the SOG configuration to obtain a simple, robust and post-CMOS-compatible process. Utilizing this technique, an integrated SOG accelerometer has been fabricated using the University of Michigan 3 µm CMOS process. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 1820125 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | A CMOS-compatible high aspect ratio silicon-on-glass in-plane micro-accelerometer | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/49037/2/jmm5_2_013.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0960-1317/15/2/013 | en_US |
dc.identifier.source | Journal of Micromechanics and Microengineering. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.