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Electrical resistivity of single crystal arsenic at very low temperatures

dc.contributor.authorUher, Ctiraden_US
dc.contributor.authorMorelli, Donald T.en_US
dc.date.accessioned2006-12-19T19:21:12Z
dc.date.available2006-12-19T19:21:12Z
dc.date.issued1986-06-01en_US
dc.identifier.citationUher, C; Morelli, D T (1986). "Electrical resistivity of single crystal arsenic at very low temperatures." Journal of Physics F: Metal Physics. 16(6): L103-L107. <http://hdl.handle.net/2027.42/49181>en_US
dc.identifier.issn0305-4608en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/49181
dc.description.abstractThe authors have carried out high-precision measurements of the electrical resistivity on very high-quality arsenic single crystals along the binary direction below 4K. The results show that rho approximately Tn with n increasing from 3 to 4 below 2K. This strong temperature dependence is a signal of carrier-phonon scattering in this temperature regime. No evidence of a superconducting transition was observed down to as low as 15 mK on the samples.en_US
dc.format.extent3118 bytes
dc.format.extent236678 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherIOP Publishing Ltden_US
dc.titleElectrical resistivity of single crystal arsenic at very low temperaturesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationotherDept. of Phys., Michigan Univ., Ann Arbor, MI, USAen_US
dc.contributor.affiliationotherDept. of Phys., Michigan Univ., Ann Arbor, MI, USAen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/49181/2/jfv16i6pL103.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0305-4608/16/6/002en_US
dc.identifier.sourceJournal of Physics F: Metal Physics.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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