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Ordered arrays of highly oriented single-crystal semiconductor nanoparticles on silicon substrates

dc.contributor.authorLei, Y.en_US
dc.contributor.authorChim, W. K.en_US
dc.contributor.authorWeissmüller, J.en_US
dc.contributor.authorWilde, G.en_US
dc.contributor.authorSun, H. P.en_US
dc.contributor.authorPan, Xiaoqingen_US
dc.date.accessioned2006-12-19T19:24:25Z
dc.date.available2006-12-19T19:24:25Z
dc.date.issued2005-09-01en_US
dc.identifier.citationLei, Y; Chim, W K; Weissmüller, J; Wilde, G; Sun, H P; Pan, X Q (2005). "Ordered arrays of highly oriented single-crystal semiconductor nanoparticles on silicon substrates." Nanotechnology. 16(9): 1892-1898. <http://hdl.handle.net/2027.42/49219>en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/49219
dc.description.abstractOne of the unsolved problems in the application of nanoparticle arrays is how to precisely control their macroscopic properties based on the microscopic properties of their basic component—the individual nanoparticle. Thus it is highly desirable to fabricate arrays of perfect iso-nanoparticles, which are defined as particles of the same size, structure, and ambient condition. Here we show that ordered semiconductor (indium oxide) single-crystal nanoparticle arrays can be obtained by oxidation of arrayed metal (indium) nanoparticles. The arrayed semiconductor nanoparticles have similar size, shape, crystalline structure and orientation, and ambient condition. Our work is a step closer towards the goal of achieving iso-nanoparticle arrays.en_US
dc.format.extent3118 bytes
dc.format.extent1699598 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherIOP Publishing Ltden_US
dc.titleOrdered arrays of highly oriented single-crystal semiconductor nanoparticles on silicon substratesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationotherForschungszentrum Karlsruhe, Institut für Nanotechnologie, Karlsruhe, 76021, Germany ; Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People’s Republic of China ; Singapore-MIT Alliance, National University of Singapore, 04-10, 4 Engineering Drive 3, Singapore 117576, Singaporeen_US
dc.contributor.affiliationotherSingapore-MIT Alliance, National University of Singapore, 04-10, 4 Engineering Drive 3, Singapore 117576, Singapore ; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singaporeen_US
dc.contributor.affiliationotherForschungszentrum Karlsruhe, Institut für Nanotechnologie, Karlsruhe, 76021, Germanyen_US
dc.contributor.affiliationotherForschungszentrum Karlsruhe, Institut für Nanotechnologie, Karlsruhe, 76021, Germanyen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/49219/2/nano5_9_079.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0957-4484/16/9/079en_US
dc.identifier.sourceNanotechnology.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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