Ordered arrays of highly oriented single-crystal semiconductor nanoparticles on silicon substrates
dc.contributor.author | Lei, Y. | en_US |
dc.contributor.author | Chim, W. K. | en_US |
dc.contributor.author | Weissmüller, J. | en_US |
dc.contributor.author | Wilde, G. | en_US |
dc.contributor.author | Sun, H. P. | en_US |
dc.contributor.author | Pan, Xiaoqing | en_US |
dc.date.accessioned | 2006-12-19T19:24:25Z | |
dc.date.available | 2006-12-19T19:24:25Z | |
dc.date.issued | 2005-09-01 | en_US |
dc.identifier.citation | Lei, Y; Chim, W K; Weissmüller, J; Wilde, G; Sun, H P; Pan, X Q (2005). "Ordered arrays of highly oriented single-crystal semiconductor nanoparticles on silicon substrates." Nanotechnology. 16(9): 1892-1898. <http://hdl.handle.net/2027.42/49219> | en_US |
dc.identifier.issn | 0957-4484 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/49219 | |
dc.description.abstract | One of the unsolved problems in the application of nanoparticle arrays is how to precisely control their macroscopic properties based on the microscopic properties of their basic component—the individual nanoparticle. Thus it is highly desirable to fabricate arrays of perfect iso-nanoparticles, which are defined as particles of the same size, structure, and ambient condition. Here we show that ordered semiconductor (indium oxide) single-crystal nanoparticle arrays can be obtained by oxidation of arrayed metal (indium) nanoparticles. The arrayed semiconductor nanoparticles have similar size, shape, crystalline structure and orientation, and ambient condition. Our work is a step closer towards the goal of achieving iso-nanoparticle arrays. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 1699598 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | Ordered arrays of highly oriented single-crystal semiconductor nanoparticles on silicon substrates | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationother | Forschungszentrum Karlsruhe, Institut für Nanotechnologie, Karlsruhe, 76021, Germany ; Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People’s Republic of China ; Singapore-MIT Alliance, National University of Singapore, 04-10, 4 Engineering Drive 3, Singapore 117576, Singapore | en_US |
dc.contributor.affiliationother | Singapore-MIT Alliance, National University of Singapore, 04-10, 4 Engineering Drive 3, Singapore 117576, Singapore ; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore | en_US |
dc.contributor.affiliationother | Forschungszentrum Karlsruhe, Institut für Nanotechnologie, Karlsruhe, 76021, Germany | en_US |
dc.contributor.affiliationother | Forschungszentrum Karlsruhe, Institut für Nanotechnologie, Karlsruhe, 76021, Germany | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/49219/2/nano5_9_079.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0957-4484/16/9/079 | en_US |
dc.identifier.source | Nanotechnology. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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