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Probing Cu Diffusion Barrier Layers on Porous Low-Dielectric-Constant Films by Posireonium Annihilation Lifetime Spectroscopy

dc.contributor.authorYi-Fan, Huen_US
dc.contributor.authorJia-Ning, Sunen_US
dc.contributor.authorGidley, David W.en_US
dc.date.accessioned2007-01-02T19:33:16Z
dc.date.available2007-01-02T19:33:16Z
dc.date.issued2005-11-01en_US
dc.identifier.citationYi-Fan, Hu; Jia-Ning, Sun; Gidley, D. W. (2005). "Probing Cu Diffusion Barrier Layers on Porous Low-Dielectric-Constant Films by Posireonium Annihilation Lifetime Spectroscopy." Chinese Physics Letters. 22(11): 2906-2909. <http://hdl.handle.net/2027.42/49235>en_US
dc.identifier.issn0256-307Xen_US
dc.identifier.urihttps://hdl.handle.net/2027.42/49235
dc.description.abstractTwo kinds of Cu diffusion barrier layers, sealed films and capped films, on nanoporous low-dielectric-constant films are investigated by positronium annihilation lifetime spectroscopy (PALS). We have found that the minimum thickness of Ta to form an effective diffusion barrier is affected by the pore size. The films with large pores require thick barrier layers to form effective diffusion barriers. In addition, a possible ultra-thin diffusion barrier, i.e. a plasma-induced densification layer, has also been investigated. The PALS data confirm that a porous low-dielectric-constant thin film can be shrunk by exposure to plasma. This shrinkage is confined to a surface layer of collapsed pores and forms a dense layer. The dense layer tends to behave as Ps (positronium) diffusion barriers. Indeed, the controlled thin ``skin'' layer could prevent Cu diffusion into the underlying dielectrics.en_US
dc.format.extent3118 bytes
dc.format.extent259192 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherIOP Publishing Ltden_US
dc.titleProbing Cu Diffusion Barrier Layers on Porous Low-Dielectric-Constant Films by Posireonium Annihilation Lifetime Spectroscopyen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Physics, University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumDepartment of Physics, University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationotherDepartment of Physics, Huazhong University of Science and Technology, Wuhan 430074en_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/49235/2/w51150.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0256-307X/22/11/050en_US
dc.identifier.sourceChinese Physics Letters.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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