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dc.contributor.authorPissoort, Davyen_US
dc.contributor.authorMichielssen, Ericen_US
dc.contributor.authorVande Ginste, Driesen_US
dc.contributor.authorOlyslager, Femkeen_US
dc.date.accessioned2007-05-02T14:17:22Z
dc.date.available2007-05-02T14:17:22Z
dc.date.issued2006-04en_US
dc.identifier.citationPissoort, Davy; Michielssen, Eric; Vande Ginste, Dries; Olyslager, Femke (2006). "A rank-revealing preconditioner for the fast integral-equation-based characterization of electromagnetic crystal devices." Microwave and Optical Technology Letters 48(4): 783-789. <http://hdl.handle.net/2027.42/50661>en_US
dc.identifier.issn0895-2477en_US
dc.identifier.issn1098-2760en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/50661
dc.description.abstractA novel rank-revealing shielded-block preconditioner that accelerates the iterative integral-equation-based analysis of wave propagation in electromagnetic crystal (EC) devices is presented. The proposed shielded-block preconditioner exploits the bandgap character of the background electromagnetic crystal in order to achieve both rapid convergence of the iterative solver as well as a low matrix-vector multiplication cost. The versatility and computational efficiency of the shielded-block preconditioner are demonstrated by its application to the analysis of wave propagation in a defectless electromagnetic crystal along an electromagnetic crystal waveguide and out of an electromagnetic crystal horn antenna array. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 783–789, 2006; Pubished online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.21475en_US
dc.format.extent293140 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.publisherWiley Subscription Services, Inc., A Wiley Companyen_US
dc.subject.otherEngineeringen_US
dc.subject.otherElectronic, Electrical & Telecommunications Engineeringen_US
dc.titleA rank-revealing preconditioner for the fast integral-equation-based characterization of electromagnetic crystal devicesen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelElectrical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumRadiation Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, MI 48109en_US
dc.contributor.affiliationotherElectromagnetics Group, Department of Information Technology, Ghent University, St.-Pietersnieuwstraat 41, Ghent, Belgiumen_US
dc.contributor.affiliationotherElectromagnetics Group, Department of Information Technology, Ghent University, St.-Pietersnieuwstraat 41, Ghent, Belgiumen_US
dc.contributor.affiliationotherElectromagnetics Group, Department of Information Technology, Ghent University, St.-Pietersnieuwstraat 41, Ghent, Belgiumen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/50661/1/21475_ftp.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1002/mop.21475en_US
dc.identifier.sourceMicrowave and Optical Technology Lettersen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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