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Study of lithium mobility in irradiated silicon : technical report
dc.contributor.authorHackler, Walter Anthonyen_US
dc.contributor.authorKikuchi, Chihiroen_US
dc.date.accessioned2006-02-03
dc.date.available2006-02-03
dc.date.issued1966en_US
dc.identifierUMR1836en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/5245
dc.format.extent99 bytes
dc.format.extent85541 bytes
dc.format.extent3366 bytes
dc.format.extent111894 bytes
dc.format.extent4274040 bytes
dc.format.mimetypetext/plain
dc.format.mimetypetext/plain
dc.format.mimetypetext/plain
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.subjectLithium -- Diffusion Rate.en_US
dc.subjectChemical Engineering.en_US
dc.titleStudy of lithium mobility in irradiated silicon : technical reporten_US
dc.typeTechnical Reporten_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/5245/5/bac3592.0001.001.pdfen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/5245/4/bac3592.0001.001.txten_US
dc.owningcollnameEngineering, College of - Technical Reports


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