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Diode and transistor type effects with ions
dc.contributor.authorHess, Robert Lawrenceen_US
dc.contributor.authorPatel, Hoshangen_US
dc.date.accessioned2006-02-03T18:57:30Z
dc.date.available2006-02-03T18:57:30Z
dc.date.issued1957en_US
dc.identifierUMR1999en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/5498
dc.format.extent40 bytes
dc.format.extent20959 bytes
dc.format.extent3366 bytes
dc.format.extent33095 bytes
dc.format.extent1126418 bytes
dc.format.mimetypetext/plain
dc.format.mimetypetext/plain
dc.format.mimetypetext/plain
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.subjectSemiconductors -- Junctions -- Research.en_US
dc.subjectDiodes -- Research.en_US
dc.subjectTransistors -- Research.en_US
dc.titleDiode and transistor type effects with ionsen_US
dc.typeTechnical Reporten_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/5498/5/bac4276.0001.001.pdfen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/5498/4/bac4276.0001.001.txten_US
dc.owningcollnameEngineering, College of - Technical Reports


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