Fabrication and Characterization of Semiconductor Ion Traps for Quantum Information Processing.
|dc.contributor.author||Stick, Daniel Lynn||en_US|
|dc.description.abstract||The electromagnetic manipulation of isolated ions has led to many advances in atomic physics, from laser cooling to precision metrology and quantum control. As technical capability in this area has grown, so has interest in building miniature electromagnetic traps for the development of large-scale quantum information processors. This thesis will primarily focus on using microfabrication techniques to build arrays of miniature ion traps, similar to techniques used in fabricating high component density microprocessors. A specific focus will be on research using a gallium arsenide/aluminum gallium arsenide heterostructure as a trap architecture, as well as the recent testing of different ion traps fabricated at outside foundries. The construction and characterization of a conventional ceramic trap capable of shuttling an ion through a junction will also be detailed, and reveal the need for moving towards lithographically fabricated traps. Combined, these serve as a set of proof-of-principle experiments pointing to methods for designing and building large scale arrays of ion traps capable of constituting a quantum information processor. As traps become smaller, electrical potentials on the electrodes have greater influence on the ion. This not only pertains to intentionally applied voltages, but also to deleterious noise sources, such as thermal Johnson noise and the more significant ``patch potential" noise, which both cause motional heating of the ion. These problematic noise sources dovetail with my thesis research into trap miniaturization since their effects become more pronounced and impossible to ignore for small trap sizes. Therefore characterizing them and investigating ways to suppress them have become an important component of my research. I will describe an experiment using a pair of movable needle electrodes to measure the ion heating rate corresponding to the harmonic frequency of the trap, the ion-electrode distance, and the electrode temperature. This information is used for characterizing the fluctuating potentials and exploring the possibility of suppressing motional heating by cooling the trap electrodes. This source of noise is also observed in other systems, and its characterization could potentially improve other precision experiments, such as those measuring deviations in the gravitational inverse square law with proximate masses.||en_US|
|dc.title||Fabrication and Characterization of Semiconductor Ion Traps for Quantum Information Processing.||en_US|
|dc.description.thesisdegreegrantor||University of Michigan, Horace H. Rackham School of Graduate Studies||en_US|
|dc.contributor.committeemember||Monroe, Christopher R.||en_US|
|dc.contributor.committeemember||Zorn, Jens C.||en_US|
|dc.owningcollname||Dissertations and Theses (Ph.D. and Master's)|
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