GaN/air gap based micro-opto-electro-mechanical (MOEM) Fabry-PÉrot filters
dc.contributor.author | Cho, E. | en_US |
dc.contributor.author | Pavlidis, Dimitris | en_US |
dc.contributor.author | Sillero, E. | en_US |
dc.date.accessioned | 2007-09-20T18:54:25Z | |
dc.date.available | 2008-09-08T14:25:12Z | en_US |
dc.date.issued | 2007-06 | en_US |
dc.identifier.citation | Cho, E.; Pavlidis, D.; Sillero, E. (2007)."GaN/air gap based micro-opto-electro-mechanical (MOEM) Fabry-PÉrot filters." physica status solidi c 4(7): 2764-2767. <http://hdl.handle.net/2027.42/56100> | en_US |
dc.identifier.issn | 1610-1634 | en_US |
dc.identifier.issn | 1610-1642 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/56100 | |
dc.description.abstract | Structural and optical properties of Fabry-PÉrot filters (FPFs) with GaN/air gap based distributed Bragg reflectors (DBRs) were studied. Reflectance of GaN/air gap DBRs on sapphire substrate was calculated from the standard transmission matrix method and results showed that 98% reflectance is achievable with only 3.5 pairs at a center wavelength of 450 nm. The thickness of the GaN layer and the first AlN layer was determined according to the deformation induced by the residual stress. In-plane strain corresponding to growth conditions and the thickness of the GaN epilayer was considered for this analysis. Optical tuning efficiency and spectral range were found to be 0.27 and 25 nm respectively for FPFs with GaN/air gap (322 nm/113 nm) based DBRs and a Λ 0 /2 air resonant cavity. The calculated pull-in voltage was 1.5 V. Crack free AlN grown on GaN by in-house MOCVD showed an etching rate of 0.2 nm/min. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) | en_US |
dc.format.extent | 174838 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.publisher | WILEY-VCH Verlag | en_US |
dc.subject.other | Physics | en_US |
dc.title | GaN/air gap based micro-opto-electro-mechanical (MOEM) Fabry-PÉrot filters | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering and Computer Science | en_US |
dc.subject.hlbsecondlevel | Materials Science and Engineering | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of High Frequency Electronics, Technische UniversitÄt Darmstadt, Merckstrasse 25, 64283 Darmstadt, Germany ; Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA ; Phone: +49 6151 16 4162, Fax: +49 6151 16 4367 | en_US |
dc.contributor.affiliationum | Department of High Frequency Electronics, Technische UniversitÄt Darmstadt, Merckstrasse 25, 64283 Darmstadt, Germany ; Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationother | Instituto de Sistemas OptoelectrÓnicos y MicrotecnologÍa and Department of Electronic Engineering, Universidad PolitÉcnica de Madrid, 28040 Madrid, Spain | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/56100/1/2764_ftp.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1002/pssc.200674730 | en_US |
dc.identifier.source | physica status solidi c | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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