Low dark current InAs/GaSb type-II superlattice infrared photodetectors with resonant tunnelling filters
dc.contributor.author | Zhu, Z. M. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Plis, E. | en_US |
dc.contributor.author | Su, X. H. | en_US |
dc.contributor.author | Krishna, Sanjay | en_US |
dc.date.accessioned | 2008-04-02T14:31:53Z | |
dc.date.available | 2008-04-02T14:31:53Z | |
dc.date.issued | 2006-12-07 | en_US |
dc.identifier.citation | Zhu, Z M; Bhattacharya, P; Plis, E; Su, X H; Krishna, S (2006). "Low dark current InAs/GaSb type-II superlattice infrared photodetectors with resonant tunnelling filters." Journal of Physics D: Applied Physics. 39(23): 4997-5001. <http://hdl.handle.net/2027.42/58092> | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/58092 | |
dc.description.abstract | InAs/GaSb type-II strained-layer superlattice (SLS) photovoltaic infrared (IR) detectors are currently of great interest for mid- and long-wave IR detection. A novel technique of reducing detector dark current by inserting resonant tunnelling barriers into a conventional InAs/GaSb SLS is investigated. The GaSb/InAs/GaSb resonant tunnelling double barrier heterostructure was designed to be periodically inserted into a conventional InAs/GaSb SLS detector to block thermally excited electrons, while permitting photo-excited electrons to tunnel through. The measured dark current density of the tunnelling InAs/GaSb SLS detector in the entire negative bias range is lower than that of the conventional SLS detector by a factor of about 3.8 at 77 K. At 84 K, the Johnson-noise-limited detectivity of the tunnelling detector, measured at 4 µm, is 18% higher than that of the conventional detector. Both the conventional and the tunnelling SLS detectors demonstrated high-temperature operation, up to 300 K. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 417862 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | Low dark current InAs/GaSb type-II superlattice infrared photodetectors with resonant tunnelling filters | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA; | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationother | Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87106, USA | en_US |
dc.contributor.affiliationother | Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87106, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/58092/2/d6_23_015.pdf | |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3727/39/23/015 | en_US |
dc.identifier.source | Journal of Physics D: Applied Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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