Preparation of p-type ZnMgO thin films by Sb doping method
dc.contributor.author | Pan, X. H. | en_US |
dc.contributor.author | Ye, Z. Z. | en_US |
dc.contributor.author | Zeng, Y. J. | en_US |
dc.contributor.author | Gu, X. Q. | en_US |
dc.contributor.author | Li, J. S. | en_US |
dc.contributor.author | Zhu, L. P. | en_US |
dc.contributor.author | Zhao, B. H. | en_US |
dc.contributor.author | Che, Y. | en_US |
dc.contributor.author | Pan, Xiaoqing | en_US |
dc.date.accessioned | 2008-04-02T14:34:31Z | |
dc.date.available | 2008-04-02T14:34:31Z | |
dc.date.issued | 2007-07-21 | en_US |
dc.identifier.citation | Pan, X H; Ye, Z Z; Zeng, Y J; Gu, X Q; Li, J S; Zhu, L P; Zhao, B H; Che, Y; Pan, X Q (2007). "Preparation of p-type ZnMgO thin films by Sb doping method." Journal of Physics D: Applied Physics. 40(14): 4241-4244. <http://hdl.handle.net/2027.42/58103> | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/58103 | |
dc.description.abstract | We report on Sb-doped p-type Zn0.95Mg0.05O thin films grown by pulsed laser deposition. The Sb-doped Zn0.95Mg0.05O films show an acceptable p-type conductivity with a resistivity of 126 Ω cm, a Hall mobility of 1.71 cm2 V−1 s−1 and a hole concentration of 2.90 × 1016 cm−3 at room temperature. Secondary ion mass spectroscopy confirms that Sb has been incorporated into the Zn0.95Mg0.05O films. Guided by x-ray photoemission spectroscopy analysis and a model for large-size-mismatched group-V dopants in ZnO, an SbZn–2VZn complex is believed to be the most possible acceptor in the Sb-doped p-type Zn0.95Mg0.05O thin films. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 308515 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | Preparation of p-type ZnMgO thin films by Sb doping method | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109-2136, USA | en_US |
dc.contributor.affiliationother | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China | en_US |
dc.contributor.affiliationother | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China; | en_US |
dc.contributor.affiliationother | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China | en_US |
dc.contributor.affiliationother | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China | en_US |
dc.contributor.affiliationother | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China | en_US |
dc.contributor.affiliationother | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China | en_US |
dc.contributor.affiliationother | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China | en_US |
dc.contributor.affiliationother | IMRA America, Inc., 1044 Woodridge Ave. Ann Arbor, MI 48105, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/58103/2/d7_14_020.pdf | |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3727/40/14/020 | en_US |
dc.identifier.source | Journal of Physics D: Applied Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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