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Preparation of p-type ZnMgO thin films by Sb doping method

dc.contributor.authorPan, X. H.en_US
dc.contributor.authorYe, Z. Z.en_US
dc.contributor.authorZeng, Y. J.en_US
dc.contributor.authorGu, X. Q.en_US
dc.contributor.authorLi, J. S.en_US
dc.contributor.authorZhu, L. P.en_US
dc.contributor.authorZhao, B. H.en_US
dc.contributor.authorChe, Y.en_US
dc.contributor.authorPan, Xiaoqingen_US
dc.date.accessioned2008-04-02T14:34:31Z
dc.date.available2008-04-02T14:34:31Z
dc.date.issued2007-07-21en_US
dc.identifier.citationPan, X H; Ye, Z Z; Zeng, Y J; Gu, X Q; Li, J S; Zhu, L P; Zhao, B H; Che, Y; Pan, X Q (2007). "Preparation of p-type ZnMgO thin films by Sb doping method." Journal of Physics D: Applied Physics. 40(14): 4241-4244. <http://hdl.handle.net/2027.42/58103>en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/58103
dc.description.abstractWe report on Sb-doped p-type Zn0.95Mg0.05O thin films grown by pulsed laser deposition. The Sb-doped Zn0.95Mg0.05O films show an acceptable p-type conductivity with a resistivity of 126 Ω cm, a Hall mobility of 1.71 cm2 V−1 s−1 and a hole concentration of 2.90 × 1016 cm−3 at room temperature. Secondary ion mass spectroscopy confirms that Sb has been incorporated into the Zn0.95Mg0.05O films. Guided by x-ray photoemission spectroscopy analysis and a model for large-size-mismatched group-V dopants in ZnO, an SbZn–2VZn complex is believed to be the most possible acceptor in the Sb-doped p-type Zn0.95Mg0.05O thin films.en_US
dc.format.extent3118 bytes
dc.format.extent308515 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherIOP Publishing Ltden_US
dc.titlePreparation of p-type ZnMgO thin films by Sb doping methoden_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109-2136, USAen_US
dc.contributor.affiliationotherState Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of Chinaen_US
dc.contributor.affiliationotherState Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;en_US
dc.contributor.affiliationotherState Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of Chinaen_US
dc.contributor.affiliationotherState Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of Chinaen_US
dc.contributor.affiliationotherState Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of Chinaen_US
dc.contributor.affiliationotherState Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of Chinaen_US
dc.contributor.affiliationotherState Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of Chinaen_US
dc.contributor.affiliationotherIMRA America, Inc., 1044 Woodridge Ave. Ann Arbor, MI 48105, USAen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/58103/2/d7_14_020.pdf
dc.identifier.doihttp://dx.doi.org/10.1088/0022-3727/40/14/020en_US
dc.identifier.sourceJournal of Physics D: Applied Physics.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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