TOPICAL REVIEW: Slow light in semiconductor heterostructures
dc.contributor.author | Ku, P. C. | en_US |
dc.contributor.author | Chang-Hasnain, C. J. | en_US |
dc.contributor.author | Chuang, S. L. | en_US |
dc.date.accessioned | 2008-04-02T14:39:22Z | |
dc.date.available | 2008-04-02T14:39:22Z | |
dc.date.issued | 2007-03-07 | en_US |
dc.identifier.citation | Ku, P C; Chang-Hasnain, C J; Chuang, S L (2007). "TOPICAL REVIEW: Slow light in semiconductor heterostructures." Journal of Physics D: Applied Physics. 40(5): R93-R107. <http://hdl.handle.net/2027.42/58125> | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/58125 | |
dc.description.abstract | This paper presents an overview of slow light in semiconductor heterostructures. The focus of this paper is to provide a unified framework to summarize and compare various physical mechanisms of slow light proposed and demonstrated in the past few years. We expand and generalize the discussions on fundamental limitation of slow light and the delay–bandwidth product trade-off to include gain systems and other mechanisms such as injection locking. We derive the maximum fractional delay and compare the differences between material dispersion and waveguide dispersion based devices. The delay–bandwidth product is proportional to the square root of the device length for a material dispersion based device but has a linear relationship for a waveguide dispersion based device. Possible scenarios to overcome the delay–bandwidth product limitation are discussed. The prospects of slow light in various applications are also investigated. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 908426 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | TOPICAL REVIEW: Slow light in semiconductor heterostructures | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Av, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationother | Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley CA 94720, USA | en_US |
dc.contributor.affiliationother | Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/58125/2/d7_5_R01.pdf | |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3727/40/5/R01 | en_US |
dc.identifier.source | Journal of Physics D: Applied Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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