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dc.contributor.authorRo, Hyun Wooken_US
dc.contributor.authorPeng, Huagenen_US
dc.contributor.authorNiihara, Ken-ichien_US
dc.contributor.authorLee, Hae-Jeongen_US
dc.contributor.authorLin, Eric K.en_US
dc.contributor.authorKarim, Alamgiren_US
dc.contributor.authorGidley, David W.en_US
dc.contributor.authorJinnai, Hiroshien_US
dc.contributor.authorYoon, Do Y.en_US
dc.contributor.authorSoles, Christopher L.en_US
dc.date.accessioned2008-06-04T14:38:59Z
dc.date.available2009-06-01T20:08:52Zen_US
dc.date.issued2008-05-19en_US
dc.identifier.citationRo, Hyun Wook; Peng, Huagen; Niihara, Ken-ichi; Lee, Hae-Jeong; Lin, Eric K.; Karim, Alamgir; Gidley, David W.; Jinnai, Hiroshi; Yoon, Do Y.; Soles, Christopher L. (2008). "Self-Sealing of Nanoporous Low Dielectric Constant Patterns Fabricated by Nanoimprint Lithography Official contribution of the National Institute of Standards and Technology; not subject to copyright in the United States. This work is supported in part by NIST Office of Microelectronic Program, University of Michigan, the System IC 2010 Project of Korea, and the Chemistry and Molecular Engineering Program of Brain Korea 21 Project. We also acknowledge the Nanofabrication Laboratory of the Center for Nanoscale Science and Technology (CNST) in NIST for providing facilities for the NIL process. ." Advanced Materials 20(10): 1934-1939. <http://hdl.handle.net/2027.42/58644>en_US
dc.identifier.issn0935-9648en_US
dc.identifier.issn1521-4095en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/58644
dc.description.abstractNo Abstract.en_US
dc.format.extent288585 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.publisherWILEY-VCH Verlagen_US
dc.subject.otherChemistryen_US
dc.subject.otherPolymer and Materials Scienceen_US
dc.titleSelf-Sealing of Nanoporous Low Dielectric Constant Patterns Fabricated by Nanoimprint Lithographyen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelEngineering (General)en_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Physics, University of Michigan Ann Arbor, MI 48109 (USA)en_US
dc.contributor.affiliationumDepartment of Physics, University of Michigan Ann Arbor, MI 48109 (USA)en_US
dc.contributor.affiliationotherNIST Polymers Division 100 Bureau Drive, stop 8541, Gaithersburg, MD 20899 (USA)en_US
dc.contributor.affiliationotherDepartment of Polymer Science and Engineering Kyoto Institute of Technology Kyoto 606-8585 (Japan)en_US
dc.contributor.affiliationotherNIST Polymers Division 100 Bureau Drive, stop 8541, Gaithersburg, MD 20899 (USA)en_US
dc.contributor.affiliationotherNIST Polymers Division 100 Bureau Drive, stop 8541, Gaithersburg, MD 20899 (USA)en_US
dc.contributor.affiliationotherNIST Polymers Division 100 Bureau Drive, stop 8541, Gaithersburg, MD 20899 (USA)en_US
dc.contributor.affiliationotherDepartment of Polymer Science and Engineering Kyoto Institute of Technology Kyoto 606-8585 (Japan)en_US
dc.contributor.affiliationotherDepartment of Chemistry, Seoul National University Seoul 151-747 (Korea)en_US
dc.contributor.affiliationotherNIST Polymers Division 100 Bureau Drive, stop 8541, Gaithersburg, MD 20899 (USA) ; NIST Polymers Division 100 Bureau Drive, stop 8541, Gaithersburg, MD 20899 (USA).en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/58644/1/1934_ftp.pdf
dc.identifier.doihttp://dx.doi.org/10.1002/adma.200701994en_US
dc.identifier.sourceAdvanced Materialsen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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