A multi-sensor study of Cl 2 etching of polycrystalline Si
dc.contributor.author | Klimecky, Pete I. | en_US |
dc.date.accessioned | 2008-06-04T14:41:14Z | |
dc.date.available | 2009-05-04T19:09:20Z | en_US |
dc.date.issued | 2008-05 | en_US |
dc.identifier.citation | Klimecky, Pete I. (2008). "A multi-sensor study of Cl 2 etching of polycrystalline Si." physica status solidi c 5(5): 1341-1345. <http://hdl.handle.net/2027.42/58654> | en_US |
dc.identifier.issn | 1610-1634 | en_US |
dc.identifier.issn | 1610-1642 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/58654 | |
dc.description.abstract | Cl 2 chemistries are the basis for etching of polycrystalline Si and other conductive gate materials in Si CMOS integrated circuit fabrication. It is now well-known that recombination of atomic Cl neutrals on the chamber walls influences the etch rate and thus leads to manufacturing reproducibility problems. In this work, we make use of multiple real-time measurements to improve the understanding of the physical mechanisms for this effect. In particular, real-time spectroscopic ellipsometry is used as both a poly-Si etch rate monitor and as a virtual SiCl 4 flow rate sensor. This aids in the quantitative interpretation of the optical emission spectroscopy data. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) | en_US |
dc.format.extent | 367830 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.publisher | WILEY-VCH Verlag | en_US |
dc.subject.other | Physics | en_US |
dc.title | A multi-sensor study of Cl 2 etching of polycrystalline Si | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering and Computer Science | en_US |
dc.subject.hlbsecondlevel | Materials Science and Engineering | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of EECS, University of Michigan, Ann Arbor, MI, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/58654/1/1341_ftp.pdf | |
dc.identifier.doi | http://dx.doi.org/10.1002/pssc.200777807 | en_US |
dc.identifier.source | physica status solidi c | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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