Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template
dc.contributor.author | Yu, Hongbo | en_US |
dc.contributor.author | Jung, Taeil | en_US |
dc.date.accessioned | 2008-06-04T14:41:27Z | |
dc.date.available | 2009-05-04T19:09:20Z | en_US |
dc.date.issued | 2008-05 | en_US |
dc.identifier.citation | Yu, Hongbo; Jung, Taeil (2008). "Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template." physica status solidi c 5(6): 1618-1620. <http://hdl.handle.net/2027.42/58655> | en_US |
dc.identifier.issn | 1610-1634 | en_US |
dc.identifier.issn | 1610-1642 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/58655 | |
dc.description.abstract | High density self-assembled nanostructured semipolar (NSSP) GaN pyramids are fabricated based on c-plane GaN template by in situ silane treatment followed by high temperature treatment. Semipolar InGaN/GaN multiple quantum wells (MQWs) were subsequently grown on the NSSP GaN. Optical properties of the MQWs were studied by temperature- dependent and excitation density varied photoluminescence. It was found that the internal electric field in the NSSP MQWs were remarkably reduced in comparison with planar c-plane MQWs. The internal quantum efficiency of the NSSP MQWs was measured to be > 30% which showed potential applications in III-nitride light emitters. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) | en_US |
dc.format.extent | 215649 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.publisher | WILEY-VCH Verlag | en_US |
dc.subject.other | Physics | en_US |
dc.title | Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering and Computer Science | en_US |
dc.subject.hlbsecondlevel | Materials Science and Engineering | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Av, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Av, Ann Arbor, MI 48109-2122, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/58655/1/1618_ftp.pdf | |
dc.identifier.doi | http://dx.doi.org/10.1002/pssc.200778541 | en_US |
dc.identifier.source | physica status solidi c | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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